Has participated in:
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Tuning carrier density and phase transitions in oxide semiconductors using focused ion beams
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A Combination of Ion Implantation and High-Temperature Annealing: The Origin of the 265 nm Absorption in AlN
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A Combination of Ion Implantation and High‐Temperature Annealing: The Origin of the 265 nm Absorption in AlN
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Heavily Doped Zinc Oxide with Plasma Frequencies in the Telecommunication Wavelength Range