Works:
- Tuning carrier density and phase transitions in oxide semiconductors using focused ion beams
- A Combination of Ion Implantation and High-Temperature Annealing: The Origin of the 265 nm Absorption in AlN
- A Combination of Ion Implantation and High‐Temperature Annealing: The Origin of the 265 nm Absorption in AlN
- Heavily Doped Zinc Oxide with Plasma Frequencies in the Telecommunication Wavelength Range