Hochschulschrift
Doping by nitrogen implantation and characterization of heteroepitaxial 3C-SiC thin films on Si and SOI substrates
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISBN
-
9783895742927
3895742929
- Maße
-
21 cm
- Umfang
-
XII, 108 S.
- Ausgabe
-
1. Aufl.
- Sprache
-
Englisch
- Anmerkungen
-
Ill., graph. Darst.
Zugl.: Berlin, Techn. Univ., Diss., 1998
- Erschienen in
-
Wissenschaftliche Schriftenreihe Elektrotechnik ; Bd. 26
- Schlagwort
-
Silicium
Kristallfläche
Siliciumcarbid
Heteroepitaxie
Ionenimplantation
Stickstoff
Wafer
SOI-Technik
- Ereignis
-
Veröffentlichung
- (wo)
-
Berlin
- (wer)
-
Köster
- (wann)
-
1998
- Urheber
-
Reichert, Walter
- Inhaltsverzeichnis
- Rechteinformation
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Letzte Aktualisierung
-
11.06.2025, 14:02 MESZ
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Objekttyp
- Hochschulschrift
Beteiligte
- Reichert, Walter
- Köster
Entstanden
- 1998
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