Demonstration of Excellent Crystalline Silicon Surface Passivation (S < 1.27 cm s −1) by High‐Rate DC‐Sputtered Hydrogenated Amorphous Silicon
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Demonstration of Excellent Crystalline Silicon Surface Passivation (S < 1.27 cm s −1) by High‐Rate DC‐Sputtered Hydrogenated Amorphous Silicon ; day:27 ; month:02 ; year:2024 ; extent:6
Solar RRL ; (27.02.2024) (gesamt 6)
- Urheber
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Li, Shasha
Miyajima, Shinsuke
- DOI
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10.1002/solr.202400045
- URN
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urn:nbn:de:101:1-2024022814083469805676
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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14.08.2025, 10:46 MESZ
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Beteiligte
- Li, Shasha
- Miyajima, Shinsuke
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Transport properties of hydrogenated amorphous silicon based thin films
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