The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
-
Englisch
- Bibliographic citation
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In: Scientific Reports 10.1 (2020): 17252.
- Classification
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Elektrotechnik, Elektronik
- Event
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Veröffentlichung
- (where)
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Erlangen
- (who)
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Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)
- (when)
-
2020
- Creator
- DOI
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10.1038/s41598-020-73977-2
- URN
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urn:nbn:de:bvb:29-opus4-231185
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
14.08.2025, 10:51 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Besendörfer, Sven
- Meissner, Elke
- Medjdoub, Farid
- Derluyn, Joff
- Friedrich, Jochen
- Erlbacher, Tobias
- Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)
Time of origin
- 2020
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AlGaN/GaN HEMTs Reliability: Degradation Modes and Analysis
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Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction
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Achieving ultralow leakage current in Schottky-MIS cascode anode lateral field-effect diode based on AlGaN/GaN HEMT
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Magnetosensory Power Devices Based on AlGaN/GaN Heterojunctions for Interactive Electronics
Dual-functional ultraviolet photodetector with graphene electrodes on AlGaN/GaN heterostructure
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Analysis of Mechanical Strain in AlGaN/GaN HFETs
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