Vertical GaN Power MOSFET with Integrated Fin-Shaped Diode for Reverse Conduction
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
-
1556-276X
- Extent
-
Online-Ressource
- Language
-
Englisch
- Notes
-
online resource.
- Bibliographic citation
-
Vertical GaN Power MOSFET with Integrated Fin-Shaped Diode for Reverse Conduction ; volume:17 ; number:1 ; day:24 ; month:8 ; year:2022 ; pages:1-6 ; date:12.2022
Nanoscale research letters ; 17, Heft 1 (24.8.2022), 1-6, 12.2022
- Classification
-
Elektrotechnik, Elektronik
- Creator
-
Sun, Tao
Luo, Xiaorong
Wei, Jie
Yang, Kemeng
Deng, Siyu
Zhao, Zhijia
Jia, Yanjiang
Zhang, Bo
- Contributor
-
SpringerLink (Online service)
- DOI
-
10.1186/s11671-022-03717-0
- URN
-
urn:nbn:de:101:1-2022111421222796542414
- Rights
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:24 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Sun, Tao
- Luo, Xiaorong
- Wei, Jie
- Yang, Kemeng
- Deng, Siyu
- Zhao, Zhijia
- Jia, Yanjiang
- Zhang, Bo
- SpringerLink (Online service)
Other Objects (12)
Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction
Variability Erosion and Improvement: from Conditional Compilation to Parameterized Inclusion
Mining Complex Feature Correlations from Large Software Product Line Configurations
Supramolecular Strategies for the Recycling of Homogeneous Catalysts
Friction as energy dissipation process associated with superlubricity of solids
Effects of quenching and partitioning (Q&P) technology on microstructure and mechanical properties of VC particulate reinforced wear-resistant alloy
Multi-peak solutions for a nonlinear Schrödinger-Poisson system including critical growth in R 3 $\mathbbR}^{3}$
A resonant boundary value problem for the fractional p-Laplacian equation
Quan Tang shi hua : 6 juan, xu ji, 2 juan
High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer
High Performance Flip-Structure Enhancement-Mode HEMT with Face-to-Face Double Gates
Inflammatory mediators of proliferative vitreoretinopathy: hypothesis and review
Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction
Variability Erosion and Improvement: from Conditional Compilation to Parameterized Inclusion
Mining Complex Feature Correlations from Large Software Product Line Configurations
Supramolecular Strategies for the Recycling of Homogeneous Catalysts
Friction as energy dissipation process associated with superlubricity of solids
Effects of quenching and partitioning (Q&P) technology on microstructure and mechanical properties of VC particulate reinforced wear-resistant alloy
Multi-peak solutions for a nonlinear Schrödinger-Poisson system including critical growth in R 3 $\mathbbR}^{3}$
A resonant boundary value problem for the fractional p-Laplacian equation
Quan Tang shi hua : 6 juan, xu ji, 2 juan
High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer
High Performance Flip-Structure Enhancement-Mode HEMT with Face-to-Face Double Gates
Inflammatory mediators of proliferative vitreoretinopathy: hypothesis and review
Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction
Variability Erosion and Improvement: from Conditional Compilation to Parameterized Inclusion
Mining Complex Feature Correlations from Large Software Product Line Configurations
Supramolecular Strategies for the Recycling of Homogeneous Catalysts
Friction as energy dissipation process associated with superlubricity of solids
Effects of quenching and partitioning (Q&P) technology on microstructure and mechanical properties of VC particulate reinforced wear-resistant alloy
Multi-peak solutions for a nonlinear Schrödinger-Poisson system including critical growth in R 3 $\mathbbR}^{3}$
A resonant boundary value problem for the fractional p-Laplacian equation
Quan Tang shi hua : 6 juan, xu ji, 2 juan
High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer
High Performance Flip-Structure Enhancement-Mode HEMT with Face-to-Face Double Gates