The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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2045-2322
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
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online resource.
- Bibliographic citation
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The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer ; volume:7 ; number:1 ; day:7 ; month:9 ; year:2017 ; pages:1-10 ; date:12.2017
Scientific reports ; 7, Heft 1 (7.9.2017), 1-10, 12.2017
- Classification
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Elektrotechnik, Elektronik
- Creator
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Shin, Yeonwoo
- Contributor
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Kim, Sang Tae
Kim, Kuntae
Kim, Mi Young
Oh, Saeroonter
Jeong, Jae Kyeong
SpringerLink (Online service)
- DOI
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10.1038/s41598-017-11461-0
- URN
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urn:nbn:de:101:1-2018071718055632802676
- Rights
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Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:21 AM CEST
Data provider
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Shin, Yeonwoo
- Kim, Sang Tae
- Kim, Kuntae
- Kim, Mi Young
- Oh, Saeroonter
- Jeong, Jae Kyeong
- SpringerLink (Online service)