The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer

Location
Deutsche Nationalbibliothek Frankfurt am Main
ISSN
2045-2322
Extent
Online-Ressource
Language
Englisch
Notes
online resource.

Bibliographic citation
The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer ; volume:7 ; number:1 ; day:7 ; month:9 ; year:2017 ; pages:1-10 ; date:12.2017
Scientific reports ; 7, Heft 1 (7.9.2017), 1-10, 12.2017

Classification
Elektrotechnik, Elektronik

Creator
Shin, Yeonwoo
Contributor
Kim, Sang Tae
Kim, Kuntae
Kim, Mi Young
Oh, Saeroonter
Jeong, Jae Kyeong
SpringerLink (Online service)

DOI
10.1038/s41598-017-11461-0
URN
urn:nbn:de:101:1-2018071718055632802676
Rights
Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
15.08.2025, 7:21 AM CEST

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Associated

  • Shin, Yeonwoo
  • Kim, Sang Tae
  • Kim, Kuntae
  • Kim, Mi Young
  • Oh, Saeroonter
  • Jeong, Jae Kyeong
  • SpringerLink (Online service)

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