Optimizing the Crystallinity of a ZrO 2 Thin Film Insulator for InGaZnO‐Based Metal–Insulator–Semiconductor Capacitors
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Optimizing the Crystallinity of a ZrO 2 Thin Film Insulator for InGaZnO‐Based Metal–Insulator–Semiconductor Capacitors ; day:22 ; month:01 ; year:2024 ; extent:6
Advanced materials interfaces ; (22.01.2024) (gesamt 6)
- Creator
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Nam, Minkyeong
Lee, Seungwoo
Jeong, Hanseok
Yoon, Ara
Park, Jin‐Seong
Jeon, Woojin
- DOI
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10.1002/admi.202300883
- URN
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urn:nbn:de:101:1-2024012314165990714970
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:26 AM CEST
Data provider
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Nam, Minkyeong
- Lee, Seungwoo
- Jeong, Hanseok
- Yoon, Ara
- Park, Jin‐Seong
- Jeon, Woojin
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