Optimizing the Crystallinity of a ZrO 2 Thin Film Insulator for InGaZnO‐Based Metal–Insulator–Semiconductor Capacitors
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Erschienen in
-
Optimizing the Crystallinity of a ZrO 2 Thin Film Insulator for InGaZnO‐Based Metal–Insulator–Semiconductor Capacitors ; day:22 ; month:01 ; year:2024 ; extent:6
Advanced materials interfaces ; (22.01.2024) (gesamt 6)
- Urheber
-
Nam, Minkyeong
Lee, Seungwoo
Jeong, Hanseok
Yoon, Ara
Park, Jin‐Seong
Jeon, Woojin
- DOI
-
10.1002/admi.202300883
- URN
-
urn:nbn:de:101:1-2024012314165990714970
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:26 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Nam, Minkyeong
- Lee, Seungwoo
- Jeong, Hanseok
- Yoon, Ara
- Park, Jin‐Seong
- Jeon, Woojin
Ähnliche Objekte (12)
Semiconductor-on-insulator materials for nanoelectronics applications
Characterization of polymeric metal-insulator-semiconductor diodes
Quasi-particle Propagation Across Semiconductor–Mott Insulator Interfaces
Heteroepitaxy of semiconductor-insulator layers and their interface properties
A Solution‐Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics
Atomic vapor depositions of metal insulator metal capacitors : investigation, development and integration
Characterization of Perovskite-like High k Dielectric Materials for Metal-Insulator-Metal Capacitors
Stability of polarization in organic ferroelectric metal-insulator-semiconductor structures
Stability of polarization in organic ferroelectric metal-insulator-semiconductor structures
Electrical investigations on praseodymium oxide aluminum oxynitride containing metal insulator semiconductor stacks and on metal ferroelectric insulator semiconductor structures consisting of poly(vinylidene fluoride trifluoroethylene)
Organic Semiconductor/Insulator Blends for Elastic Field‐Effect Transistors and Sensors
Observation of an exotic insulator to insulator transition upon electron doping the Mott insulator CeMnAsO
Semiconductor-on-insulator materials for nanoelectronics applications
Characterization of polymeric metal-insulator-semiconductor diodes
Quasi-particle Propagation Across Semiconductor–Mott Insulator Interfaces
Heteroepitaxy of semiconductor-insulator layers and their interface properties
A Solution‐Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics
Atomic vapor depositions of metal insulator metal capacitors : investigation, development and integration
Characterization of Perovskite-like High k Dielectric Materials for Metal-Insulator-Metal Capacitors
Stability of polarization in organic ferroelectric metal-insulator-semiconductor structures
Stability of polarization in organic ferroelectric metal-insulator-semiconductor structures
Electrical investigations on praseodymium oxide aluminum oxynitride containing metal insulator semiconductor stacks and on metal ferroelectric insulator semiconductor structures consisting of poly(vinylidene fluoride trifluoroethylene)
Organic Semiconductor/Insulator Blends for Elastic Field‐Effect Transistors and Sensors
Observation of an exotic insulator to insulator transition upon electron doping the Mott insulator CeMnAsO
Semiconductor-on-insulator materials for nanoelectronics applications
Characterization of polymeric metal-insulator-semiconductor diodes
Quasi-particle Propagation Across Semiconductor–Mott Insulator Interfaces
Heteroepitaxy of semiconductor-insulator layers and their interface properties
A Solution‐Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics
Atomic vapor depositions of metal insulator metal capacitors : investigation, development and integration
Characterization of Perovskite-like High k Dielectric Materials for Metal-Insulator-Metal Capacitors
Stability of polarization in organic ferroelectric metal-insulator-semiconductor structures
Stability of polarization in organic ferroelectric metal-insulator-semiconductor structures
Electrical investigations on praseodymium oxide aluminum oxynitride containing metal insulator semiconductor stacks and on metal ferroelectric insulator semiconductor structures consisting of poly(vinylidene fluoride trifluoroethylene)
Organic Semiconductor/Insulator Blends for Elastic Field‐Effect Transistors and Sensors