Impact of interface traps on charge noise and low-density transport properties in Ge/SiGe heterostructures
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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1 Online-Ressource.
- Language
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Englisch
- Bibliographic citation
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Impact of interface traps on charge noise and low-density transport properties in Ge/SiGe heterostructures ; volume:5 ; number:1 ; day:14 ; month:8 ; year:2024 ; pages:1-10 ; date:12.2024
Communications materials ; 5, Heft 1 (14.8.2024), 1-10, 12.2024
- Creator
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Massai, Leonardo
Hetényi, Bence
Mergenthaler, Matthias
Schupp, Felix J.
Sommer, Lisa
Paredes, Stephan
Bedell, Stephen W.
Harvey-Collard, Patrick
Salis, Gian
Fuhrer, Andreas
Hendrickx, Nico W.
- Contributor
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SpringerLink (Online service)
- DOI
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10.1038/s43246-024-00563-8
- URN
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urn:nbn:de:101:1-2411041103585.504803115160
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:25 AM CEST
Data provider
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Associated
- Massai, Leonardo
- Hetényi, Bence
- Mergenthaler, Matthias
- Schupp, Felix J.
- Sommer, Lisa
- Paredes, Stephan
- Bedell, Stephen W.
- Harvey-Collard, Patrick
- Salis, Gian
- Fuhrer, Andreas
- Hendrickx, Nico W.
- SpringerLink (Online service)
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Device grade SiGe heterostructures grown by plasma assisted techniques
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Modeling of SiGeSn-based semiconductor heterostructures for optoelectronic applications
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Device grade SiGe heterostructures grown by plasma assisted techniques
Band-offsets scaling of low-index Ge/native-oxide heterostructures
Modeling of SiGeSn-based semiconductor heterostructures for optoelectronic applications
Probing embedded topological modes in bulk-like GeTe-Sb2Te3 heterostructures
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