Stable chalcogenide Ge–Sb–Te heterostructures with minimal Ge segregation

to related objects

Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: 1 Online-Ressource.

Language: Englisch

Bibliographic citation: Stable chalcogenide Ge–Sb–Te heterostructures with minimal Ge segregation ; volume:14 ; number:1 ; day:8 ; month:7 ; year:2024 ; pages:1-8 ; date:12.2024
Scientific reports ; 14, Heft 1 (8.7.2024), 1-8, 12.2024

Creator: Bertelli, Marco
Sfuncia, Gianfranco
De Simone, Sara
Diaz Fattorini, Adriano
Calvi, Sabrina
Mussi, Valentina
Arciprete, Fabrizio
Mio, Antonio M.
Calarco, Raffaella
Longo, Massimo

Contributor: SpringerLink (Online service)

DOI: 10.1038/s41598-024-66441-y

URN: urn:nbn:de:101:1-2409252120572.540146637350

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:37 AM CEST

Data provider

This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.

Show original at data provider

Associated

Bertelli, Marco
Sfuncia, Gianfranco
De Simone, Sara
Diaz Fattorini, Adriano
Calvi, Sabrina
Mussi, Valentina
Arciprete, Fabrizio
Mio, Antonio M.
Calarco, Raffaella
Longo, Massimo
SpringerLink (Online service)

Other Objects (12)

Absence of Partial Amorphization in GeSbTe Chalcogenide Superlattices

Solution-derived Ge–Sb–Se–Te phase-change chalcogenide films

Absence of Partial Amorphization in GeSbTe Chalcogenide Superlattices

Revisiting the Local Structure in Ge-Sb-Te based Chalcogenide Superlattices

Epitaxial chalcogenide Ge-Sb-Te thin films and superlattices by pulsed laser deposition

Between Elemental Match and Mismatch: From K 12 Ge 3.5 Sb 6 to Salts of (Ge 2 Sb 2) 2−, (Ge 4 Sb 12) 4−, and (Ge 4 Sb 14) 4−

Understanding and Circumventing Failure Mechanisms in Chalcogenide Optical Phase Change Material Ge 2 Sb 2 Se 4 Te

Integrated optics in silicon and SiGe-heterostructures

Coupling conduction-band valleys in SiGe heterostructures via shear strain and Ge concentration oscillations

Scaling and Confinement in Ultrathin Chalcogenide Films as Exemplified by GeTe

Absence of Partial Amorphization in GeSbTe Chalcogenide Superlattices

Solution-derived Ge–Sb–Se–Te phase-change chalcogenide films

Absence of Partial Amorphization in GeSbTe Chalcogenide Superlattices

Revisiting the Local Structure in Ge-Sb-Te based Chalcogenide Superlattices

Epitaxial chalcogenide Ge-Sb-Te thin films and superlattices by pulsed laser deposition

Between Elemental Match and Mismatch: From K 12 Ge 3.5 Sb 6 to Salts of (Ge 2 Sb 2) 2−, (Ge 4 Sb 12) 4−, and (Ge 4 Sb 14) 4−

Understanding and Circumventing Failure Mechanisms in Chalcogenide Optical Phase Change Material Ge 2 Sb 2 Se 4 Te

Integrated optics in silicon and SiGe-heterostructures

Coupling conduction-band valleys in SiGe heterostructures via shear strain and Ge concentration oscillations

Scaling and Confinement in Ultrathin Chalcogenide Films as Exemplified by GeTe

Absence of Partial Amorphization in GeSbTe Chalcogenide Superlattices

Solution-derived Ge–Sb–Se–Te phase-change chalcogenide films

Absence of Partial Amorphization in GeSbTe Chalcogenide Superlattices

Revisiting the Local Structure in Ge-Sb-Te based Chalcogenide Superlattices

Epitaxial chalcogenide Ge-Sb-Te thin films and superlattices by pulsed laser deposition

Between Elemental Match and Mismatch: From K 12 Ge 3.5 Sb 6 to Salts of (Ge 2 Sb 2) 2−, (Ge 4 Sb 12) 4−, and (Ge 4 Sb 14) 4−

Understanding and Circumventing Failure Mechanisms in Chalcogenide Optical Phase Change Material Ge 2 Sb 2 Se 4 Te

Integrated optics in silicon and SiGe-heterostructures

Coupling conduction-band valleys in SiGe heterostructures via shear strain and Ge concentration oscillations

Scaling and Confinement in Ultrathin Chalcogenide Films as Exemplified by GeTe

Cultural heritage institutions wishing to register will find more information here.

Fields marked * need to be filled in.

Username*

Please enter your username

Email*

Please enter your email address

Please do not fill this field

First name

Last name

Password*

Please enter your password

Confirm password*

Please enter the same password

I have read the terms of use and the privacy policy for the collection of personal data and accept them. *

This field is required.

I would like to subscribe to the newsletter of the Deutsche Digitale Bibliothek. See newsletter subscription info.

Account created

Your "My DDB" account has been successfully created. Before you can log in to your account, you must click the confirmation link in the message we just sent to the email address you provided.

Stable chalcogenide Ge–Sb–Te heterostructures with minimal Ge segregation

Object Details

References and Relationships

Contributors, Places and Time

Further information

Data provider

Associated

Other Objects (12)

Absence of Partial Amorphization in GeSbTe Chalcogenide Superlattices

Solution-derived Ge–Sb–Se–Te phase-change chalcogenide films

Absence of Partial Amorphization in GeSbTe Chalcogenide Superlattices

Revisiting the Local Structure in Ge-Sb-Te based Chalcogenide Superlattices

Epitaxial chalcogenide Ge-Sb-Te thin films and superlattices by pulsed laser deposition

Between Elemental Match and Mismatch: From K 12 Ge 3.5 Sb 6 to Salts of (Ge 2 Sb 2) 2−, (Ge 4 Sb 12) 4−, and (Ge 4 Sb 14) 4−

Between Elemental Match and Mismatch: From K 12 Ge 3.5 Sb 6 to Salts of (Ge 2 Sb 2) 2−, (Ge 4 Sb 12) 4−, and (Ge 4 Sb 14) 4−

Understanding and Circumventing Failure Mechanisms in Chalcogenide Optical Phase Change Material Ge 2 Sb 2 Se 4 Te

Integrated optics in silicon and SiGe-heterostructures

Coupling conduction-band valleys in SiGe heterostructures via shear strain and Ge concentration oscillations

Scaling and Confinement in Ultrathin Chalcogenide Films as Exemplified by GeTe

Scaling and Confinement in Ultrathin Chalcogenide Films as Exemplified by GeTe

Absence of Partial Amorphization in GeSbTe Chalcogenide Superlattices

Solution-derived Ge–Sb–Se–Te phase-change chalcogenide films

Absence of Partial Amorphization in GeSbTe Chalcogenide Superlattices

Revisiting the Local Structure in Ge-Sb-Te based Chalcogenide Superlattices

Epitaxial chalcogenide Ge-Sb-Te thin films and superlattices by pulsed laser deposition

Between Elemental Match and Mismatch: From K 12 Ge 3.5 Sb 6 to Salts of (Ge 2 Sb 2) 2−, (Ge 4 Sb 12) 4−, and (Ge 4 Sb 14) 4−

Between Elemental Match and Mismatch: From K 12 Ge 3.5 Sb 6 to Salts of (Ge 2 Sb 2) 2−, (Ge 4 Sb 12) 4−, and (Ge 4 Sb 14) 4−

Understanding and Circumventing Failure Mechanisms in Chalcogenide Optical Phase Change Material Ge 2 Sb 2 Se 4 Te

Integrated optics in silicon and SiGe-heterostructures

Coupling conduction-band valleys in SiGe heterostructures via shear strain and Ge concentration oscillations

Scaling and Confinement in Ultrathin Chalcogenide Films as Exemplified by GeTe

Scaling and Confinement in Ultrathin Chalcogenide Films as Exemplified by GeTe

Absence of Partial Amorphization in GeSbTe Chalcogenide Superlattices

Solution-derived Ge–Sb–Se–Te phase-change chalcogenide films

Absence of Partial Amorphization in GeSbTe Chalcogenide Superlattices

Revisiting the Local Structure in Ge-Sb-Te based Chalcogenide Superlattices

Epitaxial chalcogenide Ge-Sb-Te thin films and superlattices by pulsed laser deposition

Between Elemental Match and Mismatch: From K 12 Ge 3.5 Sb 6 to Salts of (Ge 2 Sb 2) 2−, (Ge 4 Sb 12) 4−, and (Ge 4 Sb 14) 4−

Between Elemental Match and Mismatch: From K 12 Ge 3.5 Sb 6 to Salts of (Ge 2 Sb 2) 2−, (Ge 4 Sb 12) 4−, and (Ge 4 Sb 14) 4−

Understanding and Circumventing Failure Mechanisms in Chalcogenide Optical Phase Change Material Ge 2 Sb 2 Se 4 Te

Integrated optics in silicon and SiGe-heterostructures

Coupling conduction-band valleys in SiGe heterostructures via shear strain and Ge concentration oscillations

Scaling and Confinement in Ultrathin Chalcogenide Films as Exemplified by GeTe

Scaling and Confinement in Ultrathin Chalcogenide Films as Exemplified by GeTe

Related objects

Reset password