Fluorinated Graphene Contacts and Passivation Layer for MoS 2 Field Effect Transistors

Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
Online-Ressource
Language
Englisch

Bibliographic citation
Fluorinated Graphene Contacts and Passivation Layer for MoS 2 Field Effect Transistors ; day:09 ; month:03 ; year:2022 ; extent:6
Advanced electronic materials ; (09.03.2022) (gesamt 6)

Creator
Ryu, Huije
Kim, Dong‐Hyun
Kwon, Junyoung
Park, Sang Kyu
Lee, Wanggon
Seo, Hyungtak
Watanabe, Kenji
Taniguchi, Takashi
Kim, SunPhil
van der Zande, Arend M.
Son, Jangyup
Lee, Gwan‐Hyoung

DOI
10.1002/aelm.202101370
URN
urn:nbn:de:101:1-2022031014094570361040
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
15.08.2025, 7:33 AM CEST

Data provider

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Associated

  • Ryu, Huije
  • Kim, Dong‐Hyun
  • Kwon, Junyoung
  • Park, Sang Kyu
  • Lee, Wanggon
  • Seo, Hyungtak
  • Watanabe, Kenji
  • Taniguchi, Takashi
  • Kim, SunPhil
  • van der Zande, Arend M.
  • Son, Jangyup
  • Lee, Gwan‐Hyoung

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