Fluorinated Graphene Contacts and Passivation Layer for MoS 2 Field Effect Transistors
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Bibliographic citation
-
Fluorinated Graphene Contacts and Passivation Layer for MoS 2 Field Effect Transistors ; day:09 ; month:03 ; year:2022 ; extent:6
Advanced electronic materials ; (09.03.2022) (gesamt 6)
- Creator
-
Ryu, Huije
Kim, Dong‐Hyun
Kwon, Junyoung
Park, Sang Kyu
Lee, Wanggon
Seo, Hyungtak
Watanabe, Kenji
Taniguchi, Takashi
Kim, SunPhil
van der Zande, Arend M.
Son, Jangyup
Lee, Gwan‐Hyoung
- DOI
-
10.1002/aelm.202101370
- URN
-
urn:nbn:de:101:1-2022031014094570361040
- Rights
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:33 AM CEST
Data provider
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Ryu, Huije
- Kim, Dong‐Hyun
- Kwon, Junyoung
- Park, Sang Kyu
- Lee, Wanggon
- Seo, Hyungtak
- Watanabe, Kenji
- Taniguchi, Takashi
- Kim, SunPhil
- van der Zande, Arend M.
- Son, Jangyup
- Lee, Gwan‐Hyoung