Fluorinated Graphene Contacts and Passivation Layer for MoS 2 Field Effect Transistors
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Erschienen in
-
Fluorinated Graphene Contacts and Passivation Layer for MoS 2 Field Effect Transistors ; day:09 ; month:03 ; year:2022 ; extent:6
Advanced electronic materials ; (09.03.2022) (gesamt 6)
- Urheber
-
Ryu, Huije
Kim, Dong‐Hyun
Kwon, Junyoung
Park, Sang Kyu
Lee, Wanggon
Seo, Hyungtak
Watanabe, Kenji
Taniguchi, Takashi
Kim, SunPhil
van der Zande, Arend M.
Son, Jangyup
Lee, Gwan‐Hyoung
- DOI
-
10.1002/aelm.202101370
- URN
-
urn:nbn:de:101:1-2022031014094570361040
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:33 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Ryu, Huije
- Kim, Dong‐Hyun
- Kwon, Junyoung
- Park, Sang Kyu
- Lee, Wanggon
- Seo, Hyungtak
- Watanabe, Kenji
- Taniguchi, Takashi
- Kim, SunPhil
- van der Zande, Arend M.
- Son, Jangyup
- Lee, Gwan‐Hyoung
Ähnliche Objekte (12)
High‐Speed Electroluminescence Modulation in Monolayer WS 2
A ballistic graphene superconducting microwave circuit
MoS2 photodetectors integrated with photonic circuits
Coulomb-bound four- and five-particle intervalley states in an atomically-thin semiconductor
From h ‐BN to Graphene: Characterizations of Hybrid Carbon‐Doped h ‐BN for Applications in Electronic and Optoelectronic Devices
Orbitally Controlled Quantum Hall States in Decoupled Two‐Bilayer Graphene Sheets
Insulating State in Low‐Disorder Graphene Nanoribbons
Electroluminescence from multi-particle exciton complexes in transition metal dichalcogenide semiconductors
Gate‐Controlled Magnetotransport and Electrostatic Modulation of Magnetism in 2D Magnetic Semiconductor CrPS 4
Electrically tunable giant Nernst effect in two-dimensional van der Waals heterostructures
Light from van der Waals quantum tunneling devices
Hot exciton effect in photoluminescence of monolayer transition metal dichalcogenide
High‐Speed Electroluminescence Modulation in Monolayer WS 2
A ballistic graphene superconducting microwave circuit
MoS2 photodetectors integrated with photonic circuits
Coulomb-bound four- and five-particle intervalley states in an atomically-thin semiconductor
From h ‐BN to Graphene: Characterizations of Hybrid Carbon‐Doped h ‐BN for Applications in Electronic and Optoelectronic Devices
Orbitally Controlled Quantum Hall States in Decoupled Two‐Bilayer Graphene Sheets
Insulating State in Low‐Disorder Graphene Nanoribbons
Electroluminescence from multi-particle exciton complexes in transition metal dichalcogenide semiconductors
Gate‐Controlled Magnetotransport and Electrostatic Modulation of Magnetism in 2D Magnetic Semiconductor CrPS 4
Electrically tunable giant Nernst effect in two-dimensional van der Waals heterostructures
Light from van der Waals quantum tunneling devices
Hot exciton effect in photoluminescence of monolayer transition metal dichalcogenide
High‐Speed Electroluminescence Modulation in Monolayer WS 2
A ballistic graphene superconducting microwave circuit
MoS2 photodetectors integrated with photonic circuits
Coulomb-bound four- and five-particle intervalley states in an atomically-thin semiconductor
From h ‐BN to Graphene: Characterizations of Hybrid Carbon‐Doped h ‐BN for Applications in Electronic and Optoelectronic Devices
Orbitally Controlled Quantum Hall States in Decoupled Two‐Bilayer Graphene Sheets
Insulating State in Low‐Disorder Graphene Nanoribbons
Electroluminescence from multi-particle exciton complexes in transition metal dichalcogenide semiconductors
Gate‐Controlled Magnetotransport and Electrostatic Modulation of Magnetism in 2D Magnetic Semiconductor CrPS 4
Electrically tunable giant Nernst effect in two-dimensional van der Waals heterostructures
Light from van der Waals quantum tunneling devices