From h ‐BN to Graphene: Characterizations of Hybrid Carbon‐Doped h ‐BN for Applications in Electronic and Optoelectronic Devices
Abstract: Hybrid two‐dimensional materials consisting of graphene and hexagonal boron nitride (h‐BN) have drawn significant interest due to their tunable bandgap and electrical properties. Considering their composition‐dependent properties, ohmic current injection and the development of h‐BN‐based optoelectronic and high‐power electronic devices should be achievable by controlling the C concentration. In this study, electrical and optical characterizations of single‐crystal h‐BN synthesized under high‐pressure and high‐temperature (HPHT) are conducted by varying C concentrations via post‐growth diffusion. Low C‐doped h‐BN (h‐BN:C) with ≈0.1 at% C exhibits nonohmic conduction within a voltage range of ±100 V at all temperatures. In contrast, high h‐BN:C (≈10 at% C) containing C domains and graphite/graphene layers shows additional luminescence peaks and initially exhibits nonohmic conduction at 298 K, which then transforms to ohmic conduction after breakdown‐like behavior at 598 K. This phenomenon, observed only in the high h‐BN:C devices, is attributed to the C‐containing conductive path formed on the channel surface through C drift and local dielectric breakdown of h‐BN mother phase, indicating that ohmic conduction itself does not guarantee the current flow in the conduction/valence bands in h‐BN:C. With these findings, the present thorough and fruitful characterizations are beneficial for the development of h‐BN:C‐based devices.
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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From h ‐BN to Graphene: Characterizations of Hybrid Carbon‐Doped h ‐BN for Applications in Electronic and Optoelectronic Devices ; day:30 ; month:06 ; year:2023 ; extent:10
Advanced electronic materials ; (30.06.2023) (gesamt 10)
- Creator
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Ngamprapawat, Supawan
Kawase, Jimpei
Nishimura, Tomonori
Watanabe, Kenji
Taniguchi, Takashi
Nagashio, Kosuke
- DOI
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10.1002/aelm.202300083
- URN
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urn:nbn:de:101:1-2023070115091948507096
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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14.08.2025, 11:00 AM CEST
Data provider
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Ngamprapawat, Supawan
- Kawase, Jimpei
- Nishimura, Tomonori
- Watanabe, Kenji
- Taniguchi, Takashi
- Nagashio, Kosuke
Other Objects (12)
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Electrical switching of spin-polarized light-emitting diodes based on a 2D CrI3/hBN/WSe2 heterostructure
Author Correction: Electrical switching of spin-polarized light-emitting diodes based on a 2D CrI3/hBN/WSe2 heterostructure
hBN‐Encapsulated Graphene Coupled to a Plasmonic Metasurface via 1D Electrodes for Photodetection Applications
hBN‐Encapsulated Graphene Coupled to a Plasmonic Metasurface via 1D Electrodes for Photodetection Applications
Dry release transfer of graphene and few-layer h-BN by utilizing thermoplasticity of polypropylene carbonate
High‐Speed Electroluminescence Modulation in Monolayer WS 2
Emergence of orbital angular moment at van Hove singularity in graphene/h-BN moiré superlattice
Strong and Localized Luminescence from Interface Bubbles Between Stacked hBN Multilayers
Revealing the biexciton and trion-exciton complexes in BN encapsulated WSe2
Higher order gaps in the renormalized band structure of doubly aligned hBN/bilayer graphene moiré superlattice
Electroluminescence from pure resonant states in hBN-based vertical tunneling junctions
Upconversion photoluminescence excitation reveals exciton–trion and exciton–biexciton coupling in hBN/WS $$_2}$$ 2 /hBN van der Waals heterostructures
Electrical switching of spin-polarized light-emitting diodes based on a 2D CrI3/hBN/WSe2 heterostructure
Author Correction: Electrical switching of spin-polarized light-emitting diodes based on a 2D CrI3/hBN/WSe2 heterostructure
hBN‐Encapsulated Graphene Coupled to a Plasmonic Metasurface via 1D Electrodes for Photodetection Applications
hBN‐Encapsulated Graphene Coupled to a Plasmonic Metasurface via 1D Electrodes for Photodetection Applications
Dry release transfer of graphene and few-layer h-BN by utilizing thermoplasticity of polypropylene carbonate
High‐Speed Electroluminescence Modulation in Monolayer WS 2
Emergence of orbital angular moment at van Hove singularity in graphene/h-BN moiré superlattice
Strong and Localized Luminescence from Interface Bubbles Between Stacked hBN Multilayers
Revealing the biexciton and trion-exciton complexes in BN encapsulated WSe2
Higher order gaps in the renormalized band structure of doubly aligned hBN/bilayer graphene moiré superlattice
Electroluminescence from pure resonant states in hBN-based vertical tunneling junctions
Upconversion photoluminescence excitation reveals exciton–trion and exciton–biexciton coupling in hBN/WS $$_2}$$ 2 /hBN van der Waals heterostructures
Electrical switching of spin-polarized light-emitting diodes based on a 2D CrI3/hBN/WSe2 heterostructure
Author Correction: Electrical switching of spin-polarized light-emitting diodes based on a 2D CrI3/hBN/WSe2 heterostructure
hBN‐Encapsulated Graphene Coupled to a Plasmonic Metasurface via 1D Electrodes for Photodetection Applications
hBN‐Encapsulated Graphene Coupled to a Plasmonic Metasurface via 1D Electrodes for Photodetection Applications
Dry release transfer of graphene and few-layer h-BN by utilizing thermoplasticity of polypropylene carbonate
High‐Speed Electroluminescence Modulation in Monolayer WS 2
Emergence of orbital angular moment at van Hove singularity in graphene/h-BN moiré superlattice
Strong and Localized Luminescence from Interface Bubbles Between Stacked hBN Multilayers
Revealing the biexciton and trion-exciton complexes in BN encapsulated WSe2