Signatures of Mesoscopic Transport in Single Non‐Intentionally Doped GaN‐Nanowire Field‐Effect Transistors
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Signatures of Mesoscopic Transport in Single Non‐Intentionally Doped GaN‐Nanowire Field‐Effect Transistors ; day:03 ; month:03 ; year:2024 ; extent:6
Physica status solidi / A. A, Applications and materials science ; (03.03.2024) (gesamt 6)
- Urheber
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Hergert, Hannes
Zscherp, Mario F.
Klement, Philip
Schörmann, Jörg
Chatterjee, Sangam
Klar, Peter J.
Elm, Matthias T.
- DOI
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10.1002/pssa.202400040
- URN
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urn:nbn:de:101:1-2024030414013440278469
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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14.08.2025, 10:53 MESZ
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Beteiligte
- Hergert, Hannes
- Zscherp, Mario F.
- Klement, Philip
- Schörmann, Jörg
- Chatterjee, Sangam
- Klar, Peter J.
- Elm, Matthias T.
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