Low-Consumption Synaptic Devices Based on Gate-All-Around InAs Nanowire Field-Effect Transistors
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1556-276X
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
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online resource.
- Bibliographic citation
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Low-Consumption Synaptic Devices Based on Gate-All-Around InAs Nanowire Field-Effect Transistors ; volume:17 ; number:1 ; day:27 ; month:10 ; year:2022 ; pages:1-9 ; date:12.2022
Nanoscale research letters ; 17, Heft 1 (27.10.2022), 1-9, 12.2022
- Creator
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Zha, Chaofei
Luo, Wei
Zhang, Xia
Yan, Xin
Ren, Xiaomin
- Contributor
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SpringerLink (Online service)
- DOI
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10.1186/s11671-022-03740-1
- URN
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urn:nbn:de:101:1-2023011221035964448539
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:35 AM CEST
Data provider
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Associated
- Zha, Chaofei
- Luo, Wei
- Zhang, Xia
- Yan, Xin
- Ren, Xiaomin
- SpringerLink (Online service)
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