Signatures of Mesoscopic Transport in Single Non‐Intentionally Doped GaN‐Nanowire Field‐Effect Transistors

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Englisch

Bibliographic citation: Signatures of Mesoscopic Transport in Single Non‐Intentionally Doped GaN‐Nanowire Field‐Effect Transistors ; day:03 ; month:03 ; year:2024 ; extent:6
Physica status solidi / A. A, Applications and materials science ; (03.03.2024) (gesamt 6)

Creator: Hergert, Hannes
Zscherp, Mario F.
Klement, Philip
Schörmann, Jörg
Chatterjee, Sangam
Klar, Peter J.
Elm, Matthias T.

DOI: 10.1002/pssa.202400040

URN: urn:nbn:de:101:1-2024030414013440278469

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 14.08.2025, 10:53 AM CEST

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Hergert, Hannes
Zscherp, Mario F.
Klement, Philip
Schörmann, Jörg
Chatterjee, Sangam
Klar, Peter J.
Elm, Matthias T.

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Signatures of Mesoscopic Transport in Single Non‐Intentionally Doped GaN‐Nanowire Field‐Effect Transistors

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Other Objects (12)

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