A soft lithographic approach to fabricate InAs nanowire field-effect transistors

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Location: Deutsche Nationalbibliothek Frankfurt am Main

ISSN: 2045-2322

Extent: Online-Ressource

Language: Englisch

Notes: online resource.

Bibliographic citation: A soft lithographic approach to fabricate InAs nanowire field-effect transistors ; volume:8 ; number:1 ; day:16 ; month:2 ; year:2018 ; pages:1-6 ; date:12.2018
Scientific reports ; 8, Heft 1 (16.2.2018), 1-6, 12.2018

Classification: Naturwissenschaften

Creator: Lee, Sang Hwa

Contributor: Shin, Sung-Ho
Madsen, Morten
Takei, Kuniharu
Nah, Junghyo
Lee, Min Hyung
SpringerLink (Online service)

DOI: 10.1038/s41598-018-21420-y

URN: urn:nbn:de:1111-201804054282

Rights: Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 14.08.2025, 10:45 AM CEST

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Lee, Sang Hwa
Shin, Sung-Ho
Madsen, Morten
Takei, Kuniharu
Nah, Junghyo
Lee, Min Hyung
SpringerLink (Online service)

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A soft lithographic approach to fabricate InAs nanowire field-effect transistors

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