A soft lithographic approach to fabricate InAs nanowire field-effect transistors
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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2045-2322
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Anmerkungen
-
online resource.
- Erschienen in
-
A soft lithographic approach to fabricate InAs nanowire field-effect transistors ; volume:8 ; number:1 ; day:16 ; month:2 ; year:2018 ; pages:1-6 ; date:12.2018
Scientific reports ; 8, Heft 1 (16.2.2018), 1-6, 12.2018
- Klassifikation
-
Naturwissenschaften
- Urheber
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Lee, Sang Hwa
- Beteiligte Personen und Organisationen
-
Shin, Sung-Ho
Madsen, Morten
Takei, Kuniharu
Nah, Junghyo
Lee, Min Hyung
SpringerLink (Online service)
- DOI
-
10.1038/s41598-018-21420-y
- URN
-
urn:nbn:de:1111-201804054282
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
- 14.08.2025, 10:45 MESZ
Datenpartner
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Beteiligte
- Lee, Sang Hwa
- Shin, Sung-Ho
- Madsen, Morten
- Takei, Kuniharu
- Nah, Junghyo
- Lee, Min Hyung
- SpringerLink (Online service)
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