Monolithically integrated GaN gate drivers - a design guide
Abstract: In recent years, an increasing trend towards GaN integration can be observed, enabled by the lateral structure of the GaN technology. A key improvement over a discrete implementation is the integration of a monolithic gate driver. This tutorial-style article aims to give insight into the design flow. It starts with the possibilities of GaN technologies in terms of IC design followed by basic driving principles of GaN HEMTs. Gate loop requirements and recommendations for the gate driver output stage are explained. A flowchart for the design of integrated gate drivers is presented with the boundary constraints from the technology, topology research, and selection using a step-by-step guide. The design flow is run through with an example scenario and the realized gate driver design is optimized for low power consumption and fast switching, which is verified with simulations and measurements. Thus, a guide is given for the design of a monolithically integrated GaN gate driver to further advance, promote, and accelerate integration in GaN
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
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ISSN: 2644-1314
- Classification
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Elektrotechnik, Elektronik
- Event
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Veröffentlichung
- (where)
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Freiburg
- (who)
-
Universität
- (when)
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2024
- Creator
- DOI
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10.1109/ojpel.2023.3290190
- URN
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urn:nbn:de:bsz:25-freidok-2427659
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:30 AM CEST
Data provider
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Basler, Michael
- Deneke, Niklas
- Moench, Stefan
- Reiner, Richard
- Wicht, Bernhard
- Quay, Rüdiger
- Universität
Time of origin
- 2024
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Highly integrated gate drivers for Si and GaN power transistors
A gate driver IC based on high-voltage energy storing for GaN transistors
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Design and performance analysis of Tri-gate GaN HEMTs
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Charakterisierung und Präparation von GaN und Herstellung von In-Plane-Gate-Transistoren in AlxGa-x/N/GaN- Heterostrukturen
15 Gbit/s integrated laser diode driver using 0.3 μm gate length quantum well transistors
Characterization and Modeling of the Threshold Voltage Instability in p-Gate GaN HEMTs
Switching characteristics of integrated GaN-on-Si half-bridge and driver circuits