Characterization and Modeling of the Threshold Voltage Instability in p-Gate GaN HEMTs

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Englisch

Notes: Dortmund, Technische Universität, Dissertation, 2023

Classification: Elektrotechnik, Elektronik

Keyword: Galliumnitrid
HEMT
Aluminiumnitrid
Großsignalverhalten
MOS-FET
Feldeffekttransistor
HEMT

Event: Veröffentlichung

(where): Dortmund

(who): Universitätsbibliothek Dortmund

(when): 2023

Creator: Sezgin-Oeder, Thorsten

Contributor: Pfost, Martin
Schulze, Jörg

Handle: 2003/42508

URN: urn:nbn:de:101:1-2405240342266.409723376492

Rights: Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 14.08.2025, 10:55 AM CEST

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Associated

Sezgin-Oeder, Thorsten
Pfost, Martin
Schulze, Jörg
Universitätsbibliothek Dortmund

Time of origin

2023

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Characterization and Modeling of the Threshold Voltage Instability in p-Gate GaN HEMTs

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Other Objects (12)

Threshold Voltage Control in Dual-Gate Organic Electrochemical Transistors

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Using Polymer Electrolyte Gates to Set‐and‐Freeze Threshold Voltage and Local Potential in Nanowire‐based Devices and Thermoelectrics

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Tuning the Organic Electrochemical Transistor (OECT) Threshold Voltage with Monomer Blends

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High-Performance Gate-Controlled Superconducting Switches : Large Output Voltage and Reproducibility

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Threshold Voltage Control in Dual-Gate Organic Electrochemical Transistors

Threshold Voltage Control in Dual‐Gate Organic Electrochemical Transistors

Gate Camouflaging Using Reconfigurable ISFET-Based Threshold Voltage Defined Logic

Accurate Field‐Effect Mobility and Threshold Voltage Estimation for Thin‐Film Transistors with Gate‐Voltage‐Dependent Mobility in Linear Region

A gate driver IC based on high-voltage energy storing for GaN transistors

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Using Polymer Electrolyte Gates to Set‐and‐Freeze Threshold Voltage and Local Potential in Nanowire‐based Devices and Thermoelectrics

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Tuning the Organic Electrochemical Transistor (OECT) Threshold Voltage with Monomer Blends

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Enabling Active Thermal Control via an Adaptive Multi-Voltage Gate Driver

Threshold Voltage Control in Dual-Gate Organic Electrochemical Transistors

Threshold Voltage Control in Dual‐Gate Organic Electrochemical Transistors

Gate Camouflaging Using Reconfigurable ISFET-Based Threshold Voltage Defined Logic

Accurate Field‐Effect Mobility and Threshold Voltage Estimation for Thin‐Film Transistors with Gate‐Voltage‐Dependent Mobility in Linear Region

A gate driver IC based on high-voltage energy storing for GaN transistors

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Using Polymer Electrolyte Gates to Set‐and‐Freeze Threshold Voltage and Local Potential in Nanowire‐based Devices and Thermoelectrics

Transport suppression in heterostructures driven by an ac gate voltage

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