Characterization and Modeling of the Threshold Voltage Instability in p-Gate GaN HEMTs
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Anmerkungen
-
Dortmund, Technische Universität, Dissertation, 2023
- Klassifikation
-
Elektrotechnik, Elektronik
- Schlagwort
-
Galliumnitrid
HEMT
Aluminiumnitrid
Großsignalverhalten
MOS-FET
Feldeffekttransistor
HEMT
- Ereignis
-
Veröffentlichung
- (wo)
-
Dortmund
- (wer)
-
Universitätsbibliothek Dortmund
- (wann)
-
2023
- Urheber
- Beteiligte Personen und Organisationen
-
Pfost, Martin
Schulze, Jörg
- Handle
-
2003/42508
- URN
-
urn:nbn:de:101:1-2405240342266.409723376492
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
14.08.2025, 10:55 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Sezgin-Oeder, Thorsten
- Pfost, Martin
- Schulze, Jörg
- Universitätsbibliothek Dortmund
Entstanden
- 2023
Ähnliche Objekte (12)
Threshold Voltage Control in Dual-Gate Organic Electrochemical Transistors
Threshold Voltage Control in Dual‐Gate Organic Electrochemical Transistors
Gate Camouflaging Using Reconfigurable ISFET-Based Threshold Voltage Defined Logic
Accurate Field‐Effect Mobility and Threshold Voltage Estimation for Thin‐Film Transistors with Gate‐Voltage‐Dependent Mobility in Linear Region
A gate driver IC based on high-voltage energy storing for GaN transistors
Using Polymer Electrolyte Gates to Set‐and‐Freeze Threshold Voltage and Local Potential in Nanowire‐based Devices and Thermoelectrics
Current perception threshold testing in chronic ankle instability
Transport suppression in heterostructures driven by an ac gate voltage
Tuning the Organic Electrochemical Transistor (OECT) Threshold Voltage with Monomer Blends
Experimental comparison of voltage and current source gate drivers for IGBTs
High-Performance Gate-Controlled Superconducting Switches : Large Output Voltage and Reproducibility
Enabling Active Thermal Control via an Adaptive Multi-Voltage Gate Driver
Threshold Voltage Control in Dual-Gate Organic Electrochemical Transistors
Threshold Voltage Control in Dual‐Gate Organic Electrochemical Transistors
Gate Camouflaging Using Reconfigurable ISFET-Based Threshold Voltage Defined Logic
Accurate Field‐Effect Mobility and Threshold Voltage Estimation for Thin‐Film Transistors with Gate‐Voltage‐Dependent Mobility in Linear Region
A gate driver IC based on high-voltage energy storing for GaN transistors
Using Polymer Electrolyte Gates to Set‐and‐Freeze Threshold Voltage and Local Potential in Nanowire‐based Devices and Thermoelectrics
Current perception threshold testing in chronic ankle instability
Transport suppression in heterostructures driven by an ac gate voltage
Tuning the Organic Electrochemical Transistor (OECT) Threshold Voltage with Monomer Blends
Experimental comparison of voltage and current source gate drivers for IGBTs
High-Performance Gate-Controlled Superconducting Switches : Large Output Voltage and Reproducibility
Enabling Active Thermal Control via an Adaptive Multi-Voltage Gate Driver
Threshold Voltage Control in Dual-Gate Organic Electrochemical Transistors
Threshold Voltage Control in Dual‐Gate Organic Electrochemical Transistors
Gate Camouflaging Using Reconfigurable ISFET-Based Threshold Voltage Defined Logic
Accurate Field‐Effect Mobility and Threshold Voltage Estimation for Thin‐Film Transistors with Gate‐Voltage‐Dependent Mobility in Linear Region
A gate driver IC based on high-voltage energy storing for GaN transistors
Using Polymer Electrolyte Gates to Set‐and‐Freeze Threshold Voltage and Local Potential in Nanowire‐based Devices and Thermoelectrics
Current perception threshold testing in chronic ankle instability
Transport suppression in heterostructures driven by an ac gate voltage
Tuning the Organic Electrochemical Transistor (OECT) Threshold Voltage with Monomer Blends
Experimental comparison of voltage and current source gate drivers for IGBTs
High-Performance Gate-Controlled Superconducting Switches : Large Output Voltage and Reproducibility