Monolithically integrated GaN gate drivers - a design guide

Abstract: In recent years, an increasing trend towards GaN integration can be observed, enabled by the lateral structure of the GaN technology. A key improvement over a discrete implementation is the integration of a monolithic gate driver. This tutorial-style article aims to give insight into the design flow. It starts with the possibilities of GaN technologies in terms of IC design followed by basic driving principles of GaN HEMTs. Gate loop requirements and recommendations for the gate driver output stage are explained. A flowchart for the design of integrated gate drivers is presented with the boundary constraints from the technology, topology research, and selection using a step-by-step guide. The design flow is run through with an example scenario and the realized gate driver design is optimized for low power consumption and fast switching, which is verified with simulations and measurements. Thus, a guide is given for the design of a monolithically integrated GaN gate driver to further advance, promote, and accelerate integration in GaN

Standort
Deutsche Nationalbibliothek Frankfurt am Main
Umfang
Online-Ressource
Sprache
Englisch
Anmerkungen
ISSN: 2644-1314

Klassifikation
Elektrotechnik, Elektronik

Ereignis
Veröffentlichung
(wo)
Freiburg
(wer)
Universität
(wann)
2024
Urheber
Basler, Michael
Deneke, Niklas
Moench, Stefan
Reiner, Richard
Wicht, Bernhard
Quay, Rüdiger

DOI
10.1109/ojpel.2023.3290190
URN
urn:nbn:de:bsz:25-freidok-2427659
Rechteinformation
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Letzte Aktualisierung
15.08.2025, 07:30 MESZ

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Beteiligte

Entstanden

  • 2024

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