Nanotribological properties and scratch resistance of MoS2 bilayer on a SiO2/Si substrate
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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2223-7704
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
-
online resource.
- Bibliographic citation
-
Nanotribological properties and scratch resistance of MoS2 bilayer on a SiO2/Si substrate ; day:12 ; month:4 ; year:2022 ; pages:1-11
Friction ; (12.4.2022), 1-11
- Creator
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Kim, Si-hwan
Ahn, Hyo-sok
- Contributor
-
SpringerLink (Online service)
- DOI
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10.1007/s40544-022-0595-8
- URN
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urn:nbn:de:101:1-2022062722112330305349
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:30 AM CEST
Data provider
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Kim, Si-hwan
- Ahn, Hyo-sok
- SpringerLink (Online service)
Other Objects (12)
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Determining the interlayer shearing in twisted bilayer MoS2 by nanoindentation
Sliding ferroelectric memories and synapses based on rhombohedral-stacked bilayer MoS2
Temperature induced modulation of resonant Raman scattering in bilayer 2H-MoS2
Enhanced analog synaptic behavior of SiN x /a-Si bilayer memristors through Ge implantation
Scalable high performance radio frequency electronics based on large domain bilayer MoS2
Photo-sensitivity of large area physical vapor deposited mono and bilayer MoS2
Übertragung von Si=Si-Doppelbindungen auf organische Substrate : stabile konjugierte Systeme vs. Umlagerungsreaktionen
Übertragung von Si=Si-Doppelbindungen auf organische Substrate : stabile konjugierte Systeme vs. Umlagerungsreaktionen
scratch
Temperature induced crossing in the optical bandgap of mono and bilayer MoS2 on SiO2
Intercalation of Si between MoS2 layers
Highly nonlinear dipolar exciton-polaritons in bilayer MoS2
Determining the interlayer shearing in twisted bilayer MoS2 by nanoindentation
Sliding ferroelectric memories and synapses based on rhombohedral-stacked bilayer MoS2
Temperature induced modulation of resonant Raman scattering in bilayer 2H-MoS2
Enhanced analog synaptic behavior of SiN x /a-Si bilayer memristors through Ge implantation
Scalable high performance radio frequency electronics based on large domain bilayer MoS2
Photo-sensitivity of large area physical vapor deposited mono and bilayer MoS2
Übertragung von Si=Si-Doppelbindungen auf organische Substrate : stabile konjugierte Systeme vs. Umlagerungsreaktionen
Übertragung von Si=Si-Doppelbindungen auf organische Substrate : stabile konjugierte Systeme vs. Umlagerungsreaktionen
scratch
Temperature induced crossing in the optical bandgap of mono and bilayer MoS2 on SiO2
Intercalation of Si between MoS2 layers
Highly nonlinear dipolar exciton-polaritons in bilayer MoS2
Determining the interlayer shearing in twisted bilayer MoS2 by nanoindentation
Sliding ferroelectric memories and synapses based on rhombohedral-stacked bilayer MoS2
Temperature induced modulation of resonant Raman scattering in bilayer 2H-MoS2
Enhanced analog synaptic behavior of SiN x /a-Si bilayer memristors through Ge implantation
Scalable high performance radio frequency electronics based on large domain bilayer MoS2
Photo-sensitivity of large area physical vapor deposited mono and bilayer MoS2
Übertragung von Si=Si-Doppelbindungen auf organische Substrate : stabile konjugierte Systeme vs. Umlagerungsreaktionen
Übertragung von Si=Si-Doppelbindungen auf organische Substrate : stabile konjugierte Systeme vs. Umlagerungsreaktionen