Wafer‐Scale Growth and Transfer of High‐Quality MoS 2 Array by Interface Design for High‐Stability Flexible Photosensitive Device

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Englisch

Bibliographic citation: Wafer‐Scale Growth and Transfer of High‐Quality MoS 2 Array by Interface Design for High‐Stability Flexible Photosensitive Device ; day:07 ; month:07 ; year:2024 ; extent:13
Advanced science ; (07.07.2024) (gesamt 13)

Creator: Lü, Bingchen
Chen, Yang
Ma, Xiaobao
Shi, Zhiming
Zhang, Shanli
Jia, Yuping
Li, Yahui
Cheng, Yuang
Jiang, Ke
Li, Wenwen
Zhang, Wei
Yue, Yuanyuan
Li, Shaojuan
Sun, Xiaojuan
Li, Dabing

DOI: 10.1002/advs.202405050

URN: urn:nbn:de:101:1-2407091432568.122353911428

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 14.08.2025, 10:57 AM CEST

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Associated

Lü, Bingchen
Chen, Yang
Ma, Xiaobao
Shi, Zhiming
Zhang, Shanli
Jia, Yuping
Li, Yahui
Cheng, Yuang
Jiang, Ke
Li, Wenwen
Zhang, Wei
Yue, Yuanyuan
Li, Shaojuan
Sun, Xiaojuan
Li, Dabing

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Wafer‐Scale Growth and Transfer of High‐Quality MoS 2 Array by Interface Design for High‐Stability Flexible Photosensitive Device

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Other Objects (12)

Wafer‐Scale Growth and Transfer of High‐Quality MoS 2 Array by Interface Design for High‐Stability Flexible Photosensitive Device (Adv. Sci. 34/2024)

Wafer‐Scale High‐Quality Microtubular Devices Fabricated via Dry‐Etching for Optical and Microelectronic Applications

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Interlayer epitaxy of wafer-scale high-quality uniform AB-stacked bilayer graphene films on liquid Pt3Si/solid Pt

Wafer-scale and selective-area growth of high-quality hexagonal boron nitride on Ni(111) by metal-organic chemical vapor deposition

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Ultra-high brightness Micro-LEDs with wafer-scale uniform GaN-on-silicon epilayers

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Wafer‐Scale Oxygen‐Doped MoS 2 Monolayer

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