Trade‐Off Between Data Retention and Switching Speed in Resistive Switching ReRAM Devices
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Trade‐Off Between Data Retention and Switching Speed in Resistive Switching ReRAM Devices ; volume:7 ; number:1 ; year:2021
Advanced electronic materials ; 7, Heft 1 (2021)
- Urheber
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Siegel, Sebastian
Bäumer, Christoph
Gutsche, Alexander
von Witzleben, Moritz
Waser, Rainer
Menzel, Stephan
Dittmann, Regina
- DOI
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10.1002/aelm.202000815
- URN
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urn:nbn:de:101:1-2021031314342465522548
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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2025-08-15T07:29:29+0200
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Beteiligte
- Siegel, Sebastian
- Bäumer, Christoph
- Gutsche, Alexander
- von Witzleben, Moritz
- Waser, Rainer
- Menzel, Stephan
- Dittmann, Regina
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