Trade‐Off Between Data Retention and Switching Speed in Resistive Switching ReRAM Devices
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Trade‐Off Between Data Retention and Switching Speed in Resistive Switching ReRAM Devices ; volume:7 ; number:1 ; year:2021
Advanced electronic materials ; 7, Heft 1 (2021)
- Creator
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Siegel, Sebastian
Bäumer, Christoph
Gutsche, Alexander
von Witzleben, Moritz
Waser, Rainer
Menzel, Stephan
Dittmann, Regina
- DOI
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10.1002/aelm.202000815
- URN
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urn:nbn:de:101:1-2021031314342465522548
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:29 AM CEST
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Associated
- Siegel, Sebastian
- Bäumer, Christoph
- Gutsche, Alexander
- von Witzleben, Moritz
- Waser, Rainer
- Menzel, Stephan
- Dittmann, Regina
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Trade‐Off Between Data Retention and Switching Speed in Resistive Switching ReRAM Devices
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Non-standard switching phenomena and interface effects in resistive switching devices
Integration of redox based resistive switching memory devices
Defect interactions and diffusion in resistive switching oxides
Modeling and simulation of valence-change based resistive switching
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