Mechanical Stress Stability of Flexible Amorphous Zinc Tin Oxide Thin-Film Transistors
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Erschienen in
-
In: Frontiers in Electronics. 2
- Klassifikation
-
Elektrotechnik, Elektronik
- Ereignis
-
Veröffentlichung
- (wo)
-
Leipzig
- (wer)
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Universitätsbibliothek Leipzig
- (wann)
-
2024
- Urheber
- URN
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urn:nbn:de:bsz:15-qucosa2-890949
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:20 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
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Beteiligte
- Lahr, Oliver
- Steudel, Max
- von Wenckstern, Holger
- Grundmann, Marius
- Universitätsbibliothek Leipzig
Entstanden
- 2024
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