Capacitorless Two‐Transistor Dynamic Random‐Access Memory Cells Comprising Amorphous Indium–Tin–Gallium–Zinc Oxide Thin‐Film Transistors for the Multiply–Accumulate Operation
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Capacitorless Two‐Transistor Dynamic Random‐Access Memory Cells Comprising Amorphous Indium–Tin–Gallium–Zinc Oxide Thin‐Film Transistors for the Multiply–Accumulate Operation ; day:09 ; month:05 ; year:2024 ; extent:7
Advanced Materials Technologies ; (09.05.2024) (gesamt 7)
- Urheber
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Ryu, Seungho
Kang, Mingu
Cho, Kyoungah
Kim, Sangsig
- DOI
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10.1002/admt.202302209
- URN
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urn:nbn:de:101:1-2405091412460.186307888269
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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14.08.2025, 10:45 MESZ
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Beteiligte
- Ryu, Seungho
- Kang, Mingu
- Cho, Kyoungah
- Kim, Sangsig
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