Quantitative evaluation of grain boundary activity in multicrystalline semiconductors by light beam induced current : an advanced model
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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In: Journal of Applied Physics ; 108 (2010), 3. - 34516. - ISSN 0021-8979. - eISSN 1089-7550
- Classification
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Physik
- Event
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Veröffentlichung
- (where)
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Konstanz
- (who)
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Bibliothek der Universität Konstanz
- (when)
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2011
- Contributor
- URN
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urn:nbn:de:bsz:352-opus-131675
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
14.08.2025, 10:48 AM CEST
Data provider
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Associated
- Micard, Gabriel
- Hahn, Giso
- Zuschlag, Annika
- Seren, Sven
- Terheiden, Barbara
- Bibliothek der Universität Konstanz
Time of origin
- 2011
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Quantitative interpretation of light beam induced current contrast profiles : evaluating the influence of a nearby grain boundary
Quantitative interpretation of light beam induced current contrast profiles : back side surface influence
Non-destructive spatially resolved characterization of porous silicon layer stacks
On the characteristics of the doping profile under local metal contacts
Injection in light beam induced current systems : An analytical model
APCVD based stacked co-diffusion for multicrystalline silicon p-PERT solar cells
On the formation of defect clusters in mc silicon solar cells
Evaluation of processing steps regarding lifetime of iron/copper contaminated mc Si wafers
Influence of Different Post Porosification Cleaning Steps on the Parameters of Porous Silicon Layer Stack
Extraction of individual components of series resistance using TCAD simulations meeting the requirements of 2- and 3-dimensional carrier flow of IBC solar cells
Comparison of the recombination velocity at grain boundaries gained by lock-in thermography and light beam induced current measurements
Quantitative interpretation of light beam induced current contrast profiles for differing diffusion lengths on either side of a grain boundary
Quantitative interpretation of light beam induced current contrast profiles : evaluating the influence of a nearby grain boundary
Quantitative interpretation of light beam induced current contrast profiles : back side surface influence
Non-destructive spatially resolved characterization of porous silicon layer stacks
On the characteristics of the doping profile under local metal contacts
Injection in light beam induced current systems : An analytical model
APCVD based stacked co-diffusion for multicrystalline silicon p-PERT solar cells
On the formation of defect clusters in mc silicon solar cells
Evaluation of processing steps regarding lifetime of iron/copper contaminated mc Si wafers
Influence of Different Post Porosification Cleaning Steps on the Parameters of Porous Silicon Layer Stack