Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
-
2045-2322
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Anmerkungen
-
online resource.
- Erschienen in
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Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors ; volume:8 ; number:1 ; day:24 ; month:8 ; year:2018 ; pages:1-10 ; date:12.2018
Scientific reports ; 8, Heft 1 (24.8.2018), 1-10, 12.2018
- Urheber
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Pradhan, Nihar R.
- Beteiligte Personen und Organisationen
-
Garcia, Carlos
Isenberg, Bridget
Rhodes, Daniel
Feng, Simin
Memaran, Shahriar
Xin, Yan
McCreary, Amber
Walker, Angela R. Hight
Raeliarijaona, Aldo
Terrones, Humberto
Terrones, Mauricio
McGill, Stephen
Balicas, Luis
SpringerLink (Online service)
- DOI
-
10.1038/s41598-018-30969-7
- URN
-
urn:nbn:de:101:1-2018101521475674528472
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:37 MESZ
Datenpartner
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Beteiligte
- Pradhan, Nihar R.
- Garcia, Carlos
- Isenberg, Bridget
- Rhodes, Daniel
- Feng, Simin
- Memaran, Shahriar
- Xin, Yan
- McCreary, Amber
- Walker, Angela R. Hight
- Raeliarijaona, Aldo
- Terrones, Humberto
- Terrones, Mauricio
- McGill, Stephen
- Balicas, Luis
- SpringerLink (Online service)
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N-heteroacenes in organic field-effect transistors
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Interface engineering in organic field-effect transistors
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