Strain Engineering for Enhancing Carrier Mobility in MoTe 2 Field‐Effect Transistors

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Englisch

Bibliographic citation: Strain Engineering for Enhancing Carrier Mobility in MoTe 2 Field‐Effect Transistors ; day:08 ; month:08 ; year:2023 ; extent:7
Advanced science ; (08.08.2023) (gesamt 7)

Creator: Shafi, Abde Mayeen
Uddin, Md Gius
Cui, Xiaoqi
Ali, Fida
Ahmed, Faisal
Radwan, Mohamed
Das, Susobhan
Mehmood, Naveed
Sun, Zhipei
Lipsanen, Harri

DOI: 10.1002/advs.202303437

URN: urn:nbn:de:101:1-2023080915034807729259

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 14.08.2025, 10:48 AM CEST

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Shafi, Abde Mayeen
Uddin, Md Gius
Cui, Xiaoqi
Ali, Fida
Ahmed, Faisal
Radwan, Mohamed
Das, Susobhan
Mehmood, Naveed
Sun, Zhipei
Lipsanen, Harri

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Strain Engineering for Enhancing Carrier Mobility in MoTe 2 Field‐Effect Transistors

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Other Objects (12)

Reversible Polarity Control in 2D MoTe 2 Field‐Effect Transistors for Complementary Logic Gate Applications

Charge carrier transport in two-dimensional tin halide perovskite field-effect transistors

Metal nanoparticle field-effect transistor

Does carrier velocity saturation help to enhance f max in graphene field-effect transistors?

Two-Dimensional Transition Metal Dichalcogenides and Their Charge Carrier Mobilities in Field-Effect Transistors

N-heteroacenes in organic field-effect transistors

Interface engineering in organic field-effect transistors

Solution-processing of vertical field-effect transistors

Operational stability of organic field-effect transistors

Graphene‐on‐Silicon Hybrid Field‐Effect Transistors

Single crystal hybrid perovskite field-effect transistors

Graphene‐on‐Silicon Hybrid Field‐Effect Transistors

Reversible Polarity Control in 2D MoTe 2 Field‐Effect Transistors for Complementary Logic Gate Applications

Charge carrier transport in two-dimensional tin halide perovskite field-effect transistors

Metal nanoparticle field-effect transistor

Does carrier velocity saturation help to enhance f max in graphene field-effect transistors?

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N-heteroacenes in organic field-effect transistors

Interface engineering in organic field-effect transistors

Solution-processing of vertical field-effect transistors

Operational stability of organic field-effect transistors

Graphene‐on‐Silicon Hybrid Field‐Effect Transistors

Single crystal hybrid perovskite field-effect transistors

Graphene‐on‐Silicon Hybrid Field‐Effect Transistors

Reversible Polarity Control in 2D MoTe 2 Field‐Effect Transistors for Complementary Logic Gate Applications

Charge carrier transport in two-dimensional tin halide perovskite field-effect transistors

Metal nanoparticle field-effect transistor

Does carrier velocity saturation help to enhance f max in graphene field-effect transistors?

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N-heteroacenes in organic field-effect transistors

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Single crystal hybrid perovskite field-effect transistors

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