Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors

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Location: Deutsche Nationalbibliothek Frankfurt am Main

ISSN: 2045-2322

Extent: Online-Ressource

Language: Englisch

Notes: online resource.

Bibliographic citation: Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors ; volume:8 ; number:1 ; day:24 ; month:8 ; year:2018 ; pages:1-10 ; date:12.2018
Scientific reports ; 8, Heft 1 (24.8.2018), 1-10, 12.2018

Creator: Pradhan, Nihar R.

Contributor: Garcia, Carlos
Isenberg, Bridget
Rhodes, Daniel
Feng, Simin
Memaran, Shahriar
Xin, Yan
McCreary, Amber
Walker, Angela R. Hight
Raeliarijaona, Aldo
Terrones, Humberto
Terrones, Mauricio
McGill, Stephen
Balicas, Luis
SpringerLink (Online service)

DOI: 10.1038/s41598-018-30969-7

URN: urn:nbn:de:101:1-2018101521475674528472

Rights: Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:37 AM CEST

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Associated

Pradhan, Nihar R.
Garcia, Carlos
Isenberg, Bridget
Rhodes, Daniel
Feng, Simin
Memaran, Shahriar
Xin, Yan
McCreary, Amber
Walker, Angela R. Hight
Raeliarijaona, Aldo
Terrones, Humberto
Terrones, Mauricio
McGill, Stephen
Balicas, Luis
SpringerLink (Online service)

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Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors

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Other Objects (12)

Interface-Dependent Effective Mobility in Graphene Field-Effect Transistors

Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors

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Repairing atomic vacancies in single-layer MoSe2 field-effect transistor and its defect dynamics

Metal nanoparticle field-effect transistor

All‐Amorphous Junction Field‐Effect Transistors Based on High‐Mobility Zinc Oxynitride

Strain Engineering for Enhancing Carrier Mobility in MoTe 2 Field‐Effect Transistors

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Strain Engineering for Enhancing Carrier Mobility in MoTe 2 Field‐Effect Transistors

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Interface engineering in organic field-effect transistors

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Strain Engineering for Enhancing Carrier Mobility in MoTe 2 Field‐Effect Transistors

:Hydrogen Doping Oxide Transistors: Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors (Adv. Sci. 7/2019)

N-heteroacenes in organic field-effect transistors

Interface engineering in organic field-effect transistors

Solution-processing of vertical field-effect transistors

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