Impact of Mechanical Stress and Nitrogen Doping on the Defect Distribution in the Initial Stage of the 4H-SiC PVT Growth Process
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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In: Materials 15.5 (2022): 1897.
- Event
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Veröffentlichung
- (where)
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Erlangen
- (who)
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Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)
- (when)
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2022
- Creator
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Steiner, Johannes
Wellmann, Peter J.
- DOI
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10.3390/ma15051897
- URN
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urn:nbn:de:bvb:29-opus4-190330
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
25.03.2025, 1:51 PM CET
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Steiner, Johannes
- Wellmann, Peter J.
- Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)
Time of origin
- 2022
Other Objects (12)
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Improving the defect tolerance of PBF-LB/M processed 316L steel by increasing the nitrogen content
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Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC
Removing the orientational degeneracy of the TS defect in 4H–SiC by electric fields and strain
Deep defect centers in 4H and 6H silicon carbide
Global defect distribution and their influence on the local real structure of 4H-SiC
Improving the defect tolerance of PBF-LB/M processed 316L steel by increasing the nitrogen content
Defect Modulation Doping for Transparent Conducting Oxide Materials
Gene doping - the future of doping?
Manipulation of the in situ nitrogen‐vacancy doping efficiency in CVD‐grown diamond
Nitrogen Doping Improves the Immobilization and Catalytic Effects of Co9S8 in Li-S Batteries
Optically Coherent Nitrogen-Vacancy Defect Centers in Diamond Nanostructures
Bootstrapping the half-BPS line defect
Photo-induced ionization dynamics of the nitrogen vacancy defect in diamond investigated by single-shot charge state detection
Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC
Removing the orientational degeneracy of the TS defect in 4H–SiC by electric fields and strain
Deep defect centers in 4H and 6H silicon carbide
Global defect distribution and their influence on the local real structure of 4H-SiC
Improving the defect tolerance of PBF-LB/M processed 316L steel by increasing the nitrogen content
Defect Modulation Doping for Transparent Conducting Oxide Materials
Gene doping - the future of doping?
Manipulation of the in situ nitrogen‐vacancy doping efficiency in CVD‐grown diamond
Nitrogen Doping Improves the Immobilization and Catalytic Effects of Co9S8 in Li-S Batteries
Optically Coherent Nitrogen-Vacancy Defect Centers in Diamond Nanostructures
Bootstrapping the half-BPS line defect