Role of electron and ion irradiation in a reliable lift-off process with electron beam evaporation and a bilayer PMMA resist system
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Erschienen in
-
In: 10.1116/6.0001161
- Ereignis
-
Veröffentlichung
- (wo)
-
Aachen
- (wer)
-
Universitätsbibliothek der RWTH Aachen
- (wann)
-
2021
- Urheber
- DOI
-
10.18154/RWTH-2021-07816
- URN
-
urn:nbn:de:101:1-2021090807521484229704
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:35 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Sun, Bin
- Grap, Thomas
- Frahm, Thorben
- Scholz, Stefan
- Knoch, Joachim
- Universitätsbibliothek der RWTH Aachen
Entstanden
- 2021
Ähnliche Objekte (12)
Sub-Linear Current Voltage Characteristics of Schottky-Barrier Field-Effect Transistors
Modeling and realization of an ultra short channel MOSFET
Modeling and realization of an ultra short channel MOSFET
Spin Qubits Confined to a Silicon Nano-Ridge
On the Operation Modes of Dual-Gate Reconfigurable Nanowire Transistors
Research progress on Fe 3+ -activated near-infrared phosphor
Agrarian and $$\ell ^2$$ ℓ 2 -Betti numbers of locally indicable groups, with a twist
Synthesis and Characterization of Self‐Assembled Chiral Fe II 2 L 3 Cages
Nanoelectronics : from device physics and fabrication technology to advanced transistor concepts
Nanoelectronics : device physics, fabrication, simulation
Editorial
Retraction Note: Flexible Field Emitter for X-ray Generation by Implanting CNTs into Nickel Foil
Sub-Linear Current Voltage Characteristics of Schottky-Barrier Field-Effect Transistors
Modeling and realization of an ultra short channel MOSFET
Modeling and realization of an ultra short channel MOSFET
Spin Qubits Confined to a Silicon Nano-Ridge
On the Operation Modes of Dual-Gate Reconfigurable Nanowire Transistors
Research progress on Fe 3+ -activated near-infrared phosphor
Agrarian and $$\ell ^2$$ ℓ 2 -Betti numbers of locally indicable groups, with a twist
Synthesis and Characterization of Self‐Assembled Chiral Fe II 2 L 3 Cages
Nanoelectronics : from device physics and fabrication technology to advanced transistor concepts
Nanoelectronics : device physics, fabrication, simulation
Editorial
Retraction Note: Flexible Field Emitter for X-ray Generation by Implanting CNTs into Nickel Foil
Sub-Linear Current Voltage Characteristics of Schottky-Barrier Field-Effect Transistors
Modeling and realization of an ultra short channel MOSFET
Modeling and realization of an ultra short channel MOSFET
Spin Qubits Confined to a Silicon Nano-Ridge
On the Operation Modes of Dual-Gate Reconfigurable Nanowire Transistors
Research progress on Fe 3+ -activated near-infrared phosphor
Agrarian and $$\ell ^2$$ ℓ 2 -Betti numbers of locally indicable groups, with a twist
Synthesis and Characterization of Self‐Assembled Chiral Fe II 2 L 3 Cages
Nanoelectronics : from device physics and fabrication technology to advanced transistor concepts
Nanoelectronics : device physics, fabrication, simulation
Editorial