Electrochemical Metallization Memristive Devices with Al Active Electrode Using Engineered Mixed Hexagonal/Orthorhombic Polycrystalline YMnO 3
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Bibliographic citation
-
Electrochemical Metallization Memristive Devices with Al Active Electrode Using Engineered Mixed Hexagonal/Orthorhombic Polycrystalline YMnO 3 ; volume:5 ; number:5 ; year:2024 ; extent:1
Small structures ; 5, Heft 5 (2024) (gesamt 1)
- Creator
-
Wu, Rong
Schmitt, Sebastian
Maudet, Florian
Kim, Dong Jik
Deshpande, Veeresh
Dubourdieu, Catherine
- DOI
-
10.1002/sstr.202470019
- URN
-
urn:nbn:de:101:1-2405081427340.846144431592
- Rights
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
14.08.2025, 11:00 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Wu, Rong
- Schmitt, Sebastian
- Maudet, Florian
- Kim, Dong Jik
- Deshpande, Veeresh
- Dubourdieu, Catherine
Other Objects (12)
Electrochemical Metallization Memristive Devices with Al Active Electrode Using Engineered Mixed Hexagonal/Orthorhombic Polycrystalline YMnO 3
Ultra compact electrochemical metallization cells offering reproducible atomic scale memristive switching
Electrochemical metallization cell with anion supplying active electrode
Modelling heat conduction in polycrystalline hexagonal boron-nitride films
Memristive properties of hexagonal WO3 nanowires induced by oxygen vacancy migration
Magnetoelectric coupling at the domain level in polycrystalline hexagonal ErMnO3
Influence of active electrode impurity on memristive characteristics of ECM devices
Influence of active electrode impurity on memristive characteristics of ECM devices
Resistive switching in mixed orthorhombic/hexagonal RMnO3 (R = Y, Er) polycrystalline thin films
Effect of electrode materials on resistive switching behaviour of NbOx-based memristive devices
Lutetium CopperHexagonal Boron Nitride Nanocomposite Electrode System for Sensing and Signalling Ciprofloxacin
Effects of top electrode material in hafnium-oxide-based memristive systems on highly-doped Si
Electrochemical Metallization Memristive Devices with Al Active Electrode Using Engineered Mixed Hexagonal/Orthorhombic Polycrystalline YMnO 3
Ultra compact electrochemical metallization cells offering reproducible atomic scale memristive switching
Electrochemical metallization cell with anion supplying active electrode
Modelling heat conduction in polycrystalline hexagonal boron-nitride films
Memristive properties of hexagonal WO3 nanowires induced by oxygen vacancy migration
Magnetoelectric coupling at the domain level in polycrystalline hexagonal ErMnO3
Influence of active electrode impurity on memristive characteristics of ECM devices
Influence of active electrode impurity on memristive characteristics of ECM devices
Resistive switching in mixed orthorhombic/hexagonal RMnO3 (R = Y, Er) polycrystalline thin films
Effect of electrode materials on resistive switching behaviour of NbOx-based memristive devices
Lutetium CopperHexagonal Boron Nitride Nanocomposite Electrode System for Sensing and Signalling Ciprofloxacin
Effects of top electrode material in hafnium-oxide-based memristive systems on highly-doped Si
Electrochemical Metallization Memristive Devices with Al Active Electrode Using Engineered Mixed Hexagonal/Orthorhombic Polycrystalline YMnO 3
Ultra compact electrochemical metallization cells offering reproducible atomic scale memristive switching
Electrochemical metallization cell with anion supplying active electrode
Modelling heat conduction in polycrystalline hexagonal boron-nitride films
Memristive properties of hexagonal WO3 nanowires induced by oxygen vacancy migration
Magnetoelectric coupling at the domain level in polycrystalline hexagonal ErMnO3
Influence of active electrode impurity on memristive characteristics of ECM devices
Influence of active electrode impurity on memristive characteristics of ECM devices
Resistive switching in mixed orthorhombic/hexagonal RMnO3 (R = Y, Er) polycrystalline thin films
Effect of electrode materials on resistive switching behaviour of NbOx-based memristive devices
Lutetium CopperHexagonal Boron Nitride Nanocomposite Electrode System for Sensing and Signalling Ciprofloxacin