Effects of top electrode material in hafnium-oxide-based memristive systems on highly-doped Si

Location
Deutsche Nationalbibliothek Frankfurt am Main
ISSN
2045-2322
Extent
Online-Ressource
Language
Englisch
Notes
online resource.

Bibliographic citation
Effects of top electrode material in hafnium-oxide-based memristive systems on highly-doped Si ; volume:10 ; number:1 ; day:11 ; month:11 ; year:2020 ; pages:1-8 ; date:12.2020
Scientific reports ; 10, Heft 1 (11.11.2020), 1-8, 12.2020

Creator
Saylan, Sueda
Aldosari, Haila M.
Humood, Khaled
Abi Jaoude, Maguy
Ravaux, Florent
Mohammad, Baker
Contributor
SpringerLink (Online service)

DOI
10.1038/s41598-020-76333-6
URN
urn:nbn:de:101:1-2020121818315301134756
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
15.08.2025, 7:38 AM CEST

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Associated

  • Saylan, Sueda
  • Aldosari, Haila M.
  • Humood, Khaled
  • Abi Jaoude, Maguy
  • Ravaux, Florent
  • Mohammad, Baker
  • SpringerLink (Online service)

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