Negative Differential Resistance Effect in Ru-Based RRAM Device Fabricated by Atomic Layer Deposition
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
-
1556-276X
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Anmerkungen
-
online resource.
- Erschienen in
-
Negative Differential Resistance Effect in Ru-Based RRAM Device Fabricated by Atomic Layer Deposition ; volume:14 ; number:1 ; day:11 ; month:3 ; year:2019 ; pages:1-5 ; date:12.2019
Nanoscale research letters ; 14, Heft 1 (11.3.2019), 1-5, 12.2019
- Urheber
-
Feng, Yulin
Huang, Peng
Zhou, Zheng
Ding, Xiangxiang
Liu, Lifeng
Liu, Xiaoyan
Kang, Jinfeng
- Beteiligte Personen und Organisationen
-
SpringerLink (Online service)
- DOI
-
10.1186/s11671-019-2885-2
- URN
-
urn:nbn:de:101:1-2019040423581506766600
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
14.08.2025, 11:01 MESZ
Datenpartner
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Beteiligte
- Feng, Yulin
- Huang, Peng
- Zhou, Zheng
- Ding, Xiangxiang
- Liu, Lifeng
- Liu, Xiaoyan
- Kang, Jinfeng
- SpringerLink (Online service)
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