Negative Differential Resistance Effect in Ru-Based RRAM Device Fabricated by Atomic Layer Deposition

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Location: Deutsche Nationalbibliothek Frankfurt am Main

ISSN: 1556-276X

Extent: Online-Ressource

Language: Englisch

Notes: online resource.

Bibliographic citation: Negative Differential Resistance Effect in Ru-Based RRAM Device Fabricated by Atomic Layer Deposition ; volume:14 ; number:1 ; day:11 ; month:3 ; year:2019 ; pages:1-5 ; date:12.2019
Nanoscale research letters ; 14, Heft 1 (11.3.2019), 1-5, 12.2019

Creator: Feng, Yulin
Huang, Peng
Zhou, Zheng
Ding, Xiangxiang
Liu, Lifeng
Liu, Xiaoyan
Kang, Jinfeng

Contributor: SpringerLink (Online service)

DOI: 10.1186/s11671-019-2885-2

URN: urn:nbn:de:101:1-2019040423581506766600

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 14.08.2025, 11:01 AM CEST

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Feng, Yulin
Huang, Peng
Zhou, Zheng
Ding, Xiangxiang
Liu, Lifeng
Liu, Xiaoyan
Kang, Jinfeng
SpringerLink (Online service)

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Negative Differential Resistance Effect in Ru-Based RRAM Device Fabricated by Atomic Layer Deposition

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