High‐Performance P‐Channel Tin Halide Perovskite Thin Film Transistor Utilizing a 2D–3D Core–Shell Structure
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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High‐Performance P‐Channel Tin Halide Perovskite Thin Film Transistor Utilizing a 2D–3D Core–Shell Structure ; day:19 ; month:12 ; year:2021 ; extent:10
Advanced science ; (19.12.2021) (gesamt 10)
- Urheber
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Kim, Junghwan
Shiah, Yu‐Shien
Sim, Kihyung
Iimura, Soshi
Abe, Katsumi
Tsuji, Masatake
Sasase, Masato
Hosono, Hideo
- DOI
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10.1002/advs.202104993
- URN
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urn:nbn:de:101:1-2021122014043395471094
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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15.08.2025, 07:31 MESZ
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Beteiligte
- Kim, Junghwan
- Shiah, Yu‐Shien
- Sim, Kihyung
- Iimura, Soshi
- Abe, Katsumi
- Tsuji, Masatake
- Sasase, Masato
- Hosono, Hideo
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