Ruddlesden–Popper Tin‐Based Halide Perovskite Field‐Effect Transistors

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Englisch

Bibliographic citation: Ruddlesden–Popper Tin‐Based Halide Perovskite Field‐Effect Transistors ; day:04 ; month:01 ; year:2024 ; extent:19
Small structures ; (04.01.2024) (gesamt 19)

Creator: Yang, Wonryeol
Dou, Letian
Zhu, Huihui
Noh, Yong‐Young

DOI: 10.1002/sstr.202300393

URN: urn:nbn:de:101:1-2024010514034904161638

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:23 AM CEST

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Associated

Yang, Wonryeol
Dou, Letian
Zhu, Huihui
Noh, Yong‐Young

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Ruddlesden–Popper Tin‐Based Halide Perovskite Field‐Effect Transistors

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Other Objects (12)

Charge carrier transport in two-dimensional tin halide perovskite field-effect transistors

Field‐Effect Transistors Based on Formamidinium Tin Triiodide Perovskite

Field-effect transistors based on solution processed zinc tin oxide

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Ferroelectric Wide‐Bandgap Metal Halide Perovskite Field‐Effect Transistors: Toward Transparent Electronics

Metal nanoparticle field-effect transistor

Electrostatic gating of hybrid halide perovskite field-effect transistors: balanced ambipolar transport at room-temperature

Realization and Characterization of Metal-Semiconductor Field-Effect Transistors based on Amorphous Zinc Tin Oxide

Fluoride Chemistry in Tin Halide Perovskites

Energy Distribution in Tin Halide Perovskite

Modification of Two‐Dimensional Tin‐Based Perovskites by Pentanoic Acid for Improved Performance of Field‐Effect Transistors

N-heteroacenes in organic field-effect transistors

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Field‐Effect Transistors Based on Formamidinium Tin Triiodide Perovskite

Field-effect transistors based on solution processed zinc tin oxide

Room‐Temperature Halide Perovskite Field‐Effect Transistors by Ion Transport Mitigation

Ferroelectric Wide‐Bandgap Metal Halide Perovskite Field‐Effect Transistors: Toward Transparent Electronics

Metal nanoparticle field-effect transistor

Electrostatic gating of hybrid halide perovskite field-effect transistors: balanced ambipolar transport at room-temperature

Realization and Characterization of Metal-Semiconductor Field-Effect Transistors based on Amorphous Zinc Tin Oxide

Fluoride Chemistry in Tin Halide Perovskites

Energy Distribution in Tin Halide Perovskite

Modification of Two‐Dimensional Tin‐Based Perovskites by Pentanoic Acid for Improved Performance of Field‐Effect Transistors

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Charge carrier transport in two-dimensional tin halide perovskite field-effect transistors

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Field-effect transistors based on solution processed zinc tin oxide

Room‐Temperature Halide Perovskite Field‐Effect Transistors by Ion Transport Mitigation

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Metal nanoparticle field-effect transistor

Electrostatic gating of hybrid halide perovskite field-effect transistors: balanced ambipolar transport at room-temperature

Realization and Characterization of Metal-Semiconductor Field-Effect Transistors based on Amorphous Zinc Tin Oxide

Fluoride Chemistry in Tin Halide Perovskites

Energy Distribution in Tin Halide Perovskite

Modification of Two‐Dimensional Tin‐Based Perovskites by Pentanoic Acid for Improved Performance of Field‐Effect Transistors

N-heteroacenes in organic field-effect transistors

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