High‐Performance P‐Channel Tin Halide Perovskite Thin Film Transistor Utilizing a 2D–3D Core–Shell Structure

Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
Online-Ressource
Language
Englisch

Bibliographic citation
High‐Performance P‐Channel Tin Halide Perovskite Thin Film Transistor Utilizing a 2D–3D Core–Shell Structure ; day:19 ; month:12 ; year:2021 ; extent:10
Advanced science ; (19.12.2021) (gesamt 10)

Creator
Kim, Junghwan
Shiah, Yu‐Shien
Sim, Kihyung
Iimura, Soshi
Abe, Katsumi
Tsuji, Masatake
Sasase, Masato
Hosono, Hideo

DOI
10.1002/advs.202104993
URN
urn:nbn:de:101:1-2021122014043395471094
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
15.08.2025, 7:31 AM CEST

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Associated

  • Kim, Junghwan
  • Shiah, Yu‐Shien
  • Sim, Kihyung
  • Iimura, Soshi
  • Abe, Katsumi
  • Tsuji, Masatake
  • Sasase, Masato
  • Hosono, Hideo

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