Hochschulschrift | Online-Publikation
Optically detected magnetic resonance of arsenic antisite related defects in semi-insulating bulk and low temperature MBE-grown GaAs
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Language
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Englisch
- Notes
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Paderborn, Univ., Diss., 2002
- Keyword
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Galliumarsenid
EL2-Zentrum
ODMR-Spektroskopie
Faraday-Effekt
- Creator
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Tkach, Igor
- URN
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urn:nbn:de:hbz:466-20020101300
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:29 AM CEST
Data provider
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Object type
- Hochschulschrift
- Online-Publikation
Associated
- Tkach, Igor
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Optically detected magnetic resonance of arsenic antisite related defects in semi-insulating bulk and low temperature MBE-grown GaAs
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Reliable synthesis of self-running Ga droplets on GaAs (001) in MBE using RHEED patterns
BoMBeR
Optically detected magnetic resonance of arsenic antisite related defects in semi-insulating bulk and low temperature MBE-grown GaAs
MBE growth of GaAs nanowires and nanowire heterostructures
MBE growth of GaAs nanowires and nanowire heterostructures
MBE
Comparison of MBE Growth of InSb on Si (001) and GaAs (001)
Migrationsberatung (MBE).- Förderrichtlinien: Migrationsberatung (MBE); GMBI; Förderrichtlinien
aMBE
SWIR-LWIR Photoluminescence from Sb-based Epilayers Grown on GaAs Substrates by using MBE
Defect Engineering in MBE-Grown CdTe Buffer Layers on GaAs (211)B Substrates
Influence of Boron Antisite Defects on the Electrical Properties of MBE‐Grown GaAs Nanowires
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