Influence of Boron Antisite Defects on the Electrical Properties of MBE‐Grown GaAs Nanowires
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Influence of Boron Antisite Defects on the Electrical Properties of MBE‐Grown GaAs Nanowires ; volume:256 ; number:5 ; year:2019 ; extent:5
Physica status solidi / B. B, Basic solid state physics ; 256, Heft 5 (2019) (gesamt 5)
- Creator
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Lancaster, Suzanne
Andrews, Aaron Maxwell
Stoeger‐Pollach, Michael
Steiger‐Thirsfeld, Andreas
Groiss, Heiko
Schrenk, Werner
Strasser, Gottfried
Detz, Hermann
- DOI
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10.1002/pssb.201800368
- URN
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urn:nbn:de:101:1-2022073008131697565507
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:32 AM CEST
Data provider
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Lancaster, Suzanne
- Andrews, Aaron Maxwell
- Stoeger‐Pollach, Michael
- Steiger‐Thirsfeld, Andreas
- Groiss, Heiko
- Schrenk, Werner
- Strasser, Gottfried
- Detz, Hermann
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Defect Engineering in MBE-Grown CdTe Buffer Layers on GaAs (211)B Substrates
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Adhesion Measurements of Epitaxially Lifted MBE-Grown ZnSe
Optically detected magnetic resonance of arsenic antisite related defects in semi-insulating bulk and low temperature MBE-grown GaAs
Optically detected magnetic resonance of arsenic antisite related defects in semi-insulating bulk and low temperature MBE-grown GaAs
Ferromagnetism and semiconducting of boron nanowires
MBE growth of GaAs nanowires and nanowire heterostructures
MBE growth of GaAs nanowires and nanowire heterostructures
SWIR-LWIR Photoluminescence from Sb-based Epilayers Grown on GaAs Substrates by using MBE
Defect Engineering in MBE-Grown CdTe Buffer Layers on GaAs (211)B Substrates
MBE growth and characterization of germanium nanowires
MBE growth and characterization of germanium nanowires
Large-grain MBE-grown GaSe on GaAs with a Mexican hat-like valence band dispersion
Metamorphic Buffer Layer Platform for 1550 nm Single-Photon Sources Grown by MBE on (100) GaAs Substrate
Adhesion Measurements of Epitaxially Lifted MBE-Grown ZnSe
Optically detected magnetic resonance of arsenic antisite related defects in semi-insulating bulk and low temperature MBE-grown GaAs
Optically detected magnetic resonance of arsenic antisite related defects in semi-insulating bulk and low temperature MBE-grown GaAs
Ferromagnetism and semiconducting of boron nanowires
MBE growth of GaAs nanowires and nanowire heterostructures
MBE growth of GaAs nanowires and nanowire heterostructures
SWIR-LWIR Photoluminescence from Sb-based Epilayers Grown on GaAs Substrates by using MBE
Defect Engineering in MBE-Grown CdTe Buffer Layers on GaAs (211)B Substrates
MBE growth and characterization of germanium nanowires
MBE growth and characterization of germanium nanowires
Large-grain MBE-grown GaSe on GaAs with a Mexican hat-like valence band dispersion
Metamorphic Buffer Layer Platform for 1550 nm Single-Photon Sources Grown by MBE on (100) GaAs Substrate
Adhesion Measurements of Epitaxially Lifted MBE-Grown ZnSe
Optically detected magnetic resonance of arsenic antisite related defects in semi-insulating bulk and low temperature MBE-grown GaAs
Optically detected magnetic resonance of arsenic antisite related defects in semi-insulating bulk and low temperature MBE-grown GaAs