Influence of Boron Antisite Defects on the Electrical Properties of MBE‐Grown GaAs Nanowires
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Influence of Boron Antisite Defects on the Electrical Properties of MBE‐Grown GaAs Nanowires ; volume:256 ; number:5 ; year:2019 ; extent:5
Physica status solidi / B. B, Basic solid state physics ; 256, Heft 5 (2019) (gesamt 5)
- Urheber
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Lancaster, Suzanne
Andrews, Aaron Maxwell
Stoeger‐Pollach, Michael
Steiger‐Thirsfeld, Andreas
Groiss, Heiko
Schrenk, Werner
Strasser, Gottfried
Detz, Hermann
- DOI
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10.1002/pssb.201800368
- URN
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urn:nbn:de:101:1-2022073008131697565507
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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15.08.2025, 07:32 MESZ
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Beteiligte
- Lancaster, Suzanne
- Andrews, Aaron Maxwell
- Stoeger‐Pollach, Michael
- Steiger‐Thirsfeld, Andreas
- Groiss, Heiko
- Schrenk, Werner
- Strasser, Gottfried
- Detz, Hermann
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MBE growth and characterization of germanium nanowires
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Large-grain MBE-grown GaSe on GaAs with a Mexican hat-like valence band dispersion
Metamorphic Buffer Layer Platform for 1550 nm Single-Photon Sources Grown by MBE on (100) GaAs Substrate
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Optically detected magnetic resonance of arsenic antisite related defects in semi-insulating bulk and low temperature MBE-grown GaAs