Design of Materials Configuration for Optimizing Redox‐Based Resistive Switching Memories
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Design of Materials Configuration for Optimizing Redox‐Based Resistive Switching Memories ; day:21 ; month:11 ; year:2021 ; extent:14
Advanced materials ; (21.11.2021) (gesamt 14)
- Creator
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Chen, Shaochuan
Valov, Ilia
- DOI
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10.1002/adma.202105022
- URN
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urn:nbn:de:101:1-2021112214014026873944
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:23 AM CEST
Data provider
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Associated
- Chen, Shaochuan
- Valov, Ilia
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TaO x -based resistive switching memories: prospective and challenges
The role of materials design in oxide-based resistive memories
Metal/Metal Redox Isomerism Governed by Configuration
Design and analysis of future memories based on switchable resistive elements
Neuromorphic Motion Detection and Orientation Selectivity by Volatile Resistive Switching Memories
Design of Materials Configuration for Optimizing Redox-Based Resistive Switching Memories
Variability in Resistive Memories
Cognitive applications in resistive memories
Interaction between redox-based resistive switching mechanisms
Atomic Layer Deposition Films for Resistive Random‐Access Memories
Integration of redox-based resistive switching memory devices
Integration of redox based resistive switching memory devices
TaO x -based resistive switching memories: prospective and challenges
The role of materials design in oxide-based resistive memories
Metal/Metal Redox Isomerism Governed by Configuration
Design and analysis of future memories based on switchable resistive elements