Design of Materials Configuration for Optimizing Redox‐Based Resistive Switching Memories
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Design of Materials Configuration for Optimizing Redox‐Based Resistive Switching Memories ; day:21 ; month:11 ; year:2021 ; extent:14
Advanced materials ; (21.11.2021) (gesamt 14)
- Urheber
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Chen, Shaochuan
Valov, Ilia
- DOI
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10.1002/adma.202105022
- URN
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urn:nbn:de:101:1-2021112214014026873944
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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15.08.2025, 07:23 MESZ
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Beteiligte
- Chen, Shaochuan
- Valov, Ilia
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