- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Bibliographic citation
-
In: Applied Physics Letters (118:20) - Melville, NY : American Inst. of Physics - Art.-Id. 202101
- Event
-
Veröffentlichung
- (where)
-
Berlin
- (who)
-
Technische Universität Berlin
- (when)
-
2021
- Creator
-
Feneberg, Martin
Romero, Fátima
Goldhahn, Rüdiger
Wernicke, Tim
Reich, Christoph
Stellmach, Joachim
Mehnke, Frank
Knauer, Arne
Weyers, Markus
Kneissl, Michael
- DOI
-
10.14279/depositonce-12652
- Handle
-
11303/13879
- URN
-
urn:nbn:de:101:1-2021111700571508000143
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
25.03.2025, 1:51 PM CET
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Feneberg, Martin
- Romero, Fátima
- Goldhahn, Rüdiger
- Wernicke, Tim
- Reich, Christoph
- Stellmach, Joachim
- Mehnke, Frank
- Knauer, Arne
- Weyers, Markus
- Kneissl, Michael
- Technische Universität Berlin
Time of origin
- 2021
Other Objects (12)
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Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light‐Emitting Diodes
Surface and thin film analysis by spectroscopic reflectometry with extreme ultraviolet emitting laboratory sources
Study of electrical fatigue by defect engineering in organic light-emitting diodes
Luminescence
Origin of defect luminescence in ultraviolet emitting AlGaN diode structures
Effect of Inhomogeneous Broadening in Ultraviolet III-Nitride Light-Emitting Diodes
Improved Efficiency of Ultraviolet B Light‐Emitting Diodes with Optimized p‐Side
Radiative Recombination and Carrier Injection Efficiencies in 265 nm Deep Ultraviolet Light‐Emitting Diodes Grown on AlN/Sapphire Templates with Different Defect Densities
Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N
Single photon avalanche diode (SPAD) array detectors for luminescence based biomedical applications
Bound-exciton-induced current bistability in a silicon light-emitting diode
Surface plasmon resonance sensor utilizing an integrated organic light emitting diode
Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light‐Emitting Diodes
Surface and thin film analysis by spectroscopic reflectometry with extreme ultraviolet emitting laboratory sources
Study of electrical fatigue by defect engineering in organic light-emitting diodes
Luminescence
Origin of defect luminescence in ultraviolet emitting AlGaN diode structures
Effect of Inhomogeneous Broadening in Ultraviolet III-Nitride Light-Emitting Diodes
Improved Efficiency of Ultraviolet B Light‐Emitting Diodes with Optimized p‐Side
Radiative Recombination and Carrier Injection Efficiencies in 265 nm Deep Ultraviolet Light‐Emitting Diodes Grown on AlN/Sapphire Templates with Different Defect Densities
Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N
Single photon avalanche diode (SPAD) array detectors for luminescence based biomedical applications
Bound-exciton-induced current bistability in a silicon light-emitting diode
Surface plasmon resonance sensor utilizing an integrated organic light emitting diode
Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light‐Emitting Diodes
Surface and thin film analysis by spectroscopic reflectometry with extreme ultraviolet emitting laboratory sources
Study of electrical fatigue by defect engineering in organic light-emitting diodes