Current Saturation Behavior in GaN Polarization Superjunction Hybrid Diode
This is the first report on the current saturation behavior observed in the forward characteristics of polarization superjunction (PSJ)‐based hybrid PiN‐Schottky GaN power diodes fabricated on Sapphire. In the current saturation region, most of the applied anode voltage is dropped across the regions immediately adjacent to the edge of the doped P‐GaN region closest to the cathode. This significant potential drop occurs within a short distance, resulting in a high electric field and depletion of electrons, causing the current saturation behavior via velocity saturation in these PSJ hybrid diodes.
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Current Saturation Behavior in GaN Polarization Superjunction Hybrid Diode ; day:09 ; month:07 ; year:2024 ; extent:5
Physica status solidi / A. A, Applications and materials science ; (09.07.2024) (gesamt 5)
- Creator
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Du, Yangming
Sankara Narayanan, Ekkanath Madathil
Kawai, Hiroji
Yagi, Shuichi
Narui, Hironobu
- DOI
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10.1002/pssa.202300919
- URN
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urn:nbn:de:101:1-2407101430553.063880592270
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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14.08.2025, 10:50 AM CEST
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Associated
- Du, Yangming
- Sankara Narayanan, Ekkanath Madathil
- Kawai, Hiroji
- Yagi, Shuichi
- Narui, Hironobu
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