Soliton formation and spectral translation into visible on CMOS-compatible 4H-silicon-carbide-on-insulator platform

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Location: Deutsche Nationalbibliothek Frankfurt am Main

ISSN: 2047-7538

Extent: Online-Ressource

Language: Englisch

Notes: online resource.

Bibliographic citation: Soliton formation and spectral translation into visible on CMOS-compatible 4H-silicon-carbide-on-insulator platform ; volume:11 ; number:1 ; day:7 ; month:12 ; year:2022 ; pages:1-10 ; date:12.2022
Light ; 11, Heft 1 (7.12.2022), 1-10, 12.2022

Creator: Wang, Chengli
Li, Jin
Yi, Ailun
Fang, Zhiwei
Zhou, Liping
Wang, Zhe
Niu, Rui
Chen, Yang
Zhang, Jiaxiang
Cheng, Ya
Liu, Junqiu
Dong, Chun-Hua
Ou, Xin

Contributor: SpringerLink (Online service)

DOI: 10.1038/s41377-022-01042-w

URN: urn:nbn:de:101:1-2023021721005518866020

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 14.08.2025, 10:55 AM CEST

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Associated

Wang, Chengli
Li, Jin
Yi, Ailun
Fang, Zhiwei
Zhou, Liping
Wang, Zhe
Niu, Rui
Chen, Yang
Zhang, Jiaxiang
Cheng, Ya
Liu, Junqiu
Dong, Chun-Hua
Ou, Xin
SpringerLink (Online service)

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Soliton formation and spectral translation into visible on CMOS-compatible 4H-silicon-carbide-on-insulator platform

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Other Objects (12)

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Silicon carbide - graphene nano-gratings on 4H and 6H semi-insulating SiC

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Comparative analysis on surface property in anodic oxidation polishing of reaction-sintered silicon carbide and single-crystal 4H silicon carbide

Spin-acoustic control of silicon vacancies in 4H silicon carbide

Silicon vacancy defects in 4H-silicon carbide semiconductor for quantum applications

Electrical Characterization of Point Defects in 4H Silicon Carbide Power Devices

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Silicon carbide - graphene nano-gratings on 4H and 6H semi-insulating SiC

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Comparative analysis on surface property in anodic oxidation polishing of reaction-sintered silicon carbide and single-crystal 4H silicon carbide

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