MEMS pressure sensors with novel TSV design for extreme temperature environments

Abstract: This study introduces a manufacturing process based on industrial MEMS technology, enabling the production of diverse sensor designs customized for a wide range of absolute pressure measurements. Using monocrystalline silicon as the structural material minimizes thermal stresses and eliminates temperature-dependent semiconductor effects, as silicon functions solely as a mechanical material. Integrating a eutectic bonding process in the sensor fabrication allows for a reliable operation at temperatures up to 350 °C. The capacitive sensor electrodes are enclosed within a silicon-based Faraday cage, ensuring effective shielding against external electrostatic interference. An innovative Through-Silicon Via (TSV) design, sealed using gold–gold (Au-Au) diffusion and gold–silicon (Au-Si) eutectic bonding, further enhances the mechanical and thermal stability of the sensors, even under high-temperature conditions. The unfilled TSV structure mitigates mechanical stress from thermal expansion. The sensors exhibited excellent performance, achieving a linearity of 99.994%, a thermal drift of −0.0164% FS (full scale)/K at full load and 350 °C, and a high sensitivity of 34 fF/kPa. These results highlight the potential of these sensors for high-performance applications across various demanding environments

Angaben zum Objekt

• Standort: Deutsche Nationalbibliothek Frankfurt am Main
• Umfang: Online-Ressource
• Sprache: Englisch
• Anmerkungen: Sensors. - 25, 3 (2025) , 636, ISSN: 1424-8220

Beteiligte, Orts- und Zeitangaben

• Ereignis: Veröffentlichung
• (wo): Freiburg
• (wer): Universität
• (wann): 2025
• Urheber: Ghanam, Muhannad ; Woias, Peter ; Goldschmidtböing, Frank

Weitere Informationen

• DOI: 10.3390/s25030636
• URN: urn:nbn:de:bsz:25-freidok-2624812
• Rechteinformation: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
• Letzte Aktualisierung: 15.08.2025, 07:24 MESZ