Effect of oxygen vacancy and Si doping on the electrical properties of Ta2O5 in memristor characteristics
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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1 Online-Ressource.
- Language
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Englisch
- Bibliographic citation
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Effect of oxygen vacancy and Si doping on the electrical properties of Ta2O5 in memristor characteristics ; volume:13 ; number:1 ; day:3 ; month:10 ; year:2023 ; pages:1-12 ; date:12.2023
Scientific reports ; 13, Heft 1 (3.10.2023), 1-12, 12.2023
- Creator
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Islam, Md. Sherajul
Lee, Jonghoon
Ganguli, Sabyasachi
Roy, Ajit K.
- Contributor
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SpringerLink (Online service)
- DOI
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10.1038/s41598-023-43888-z
- URN
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urn:nbn:de:101:1-2024013114420011911866
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:27 AM CEST
Data provider
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Islam, Md. Sherajul
- Lee, Jonghoon
- Ganguli, Sabyasachi
- Roy, Ajit K.
- SpringerLink (Online service)
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Tin and Oxygen-Vacancy Co-doping into Hematite Photoanode for Improved Photoelectrochemical Performances
Correction to: Tin and Oxygen-Vacancy Co-doping into Hematite Photoanode for Improved Photoelectrochemical Performances
Overview of emerging memristor families from resistive memristor to spintronic memristor
Guided anisotropic oxygen transport in vacancy ordered oxides
High oxygen-vacancy diffusivity predicted for perovskite oxide Ca0.5Sr0.5Co0.8Fe0.2O2.5
Ferroelectrics with a controlled oxygen-vacancy distribution by design
Critical ionic transport across an oxygen-vacancy ordering transition
A Novel Hybrid Point Defect of Oxygen Vacancy and Phosphorus Doping in TiO2 Anode for High-Performance Sodium Ion Capacitor
Whisky‐Born Memristor
Unveiling oxygen vacancy impact on lizardite thermo and mechanical properties
An Oxygen Vacancy Memristor Ruled by Electron Correlations
Mimicking Neurotransmitter Release and Long‐Term Plasticity by Oxygen Vacancy Migration in a Tunnel Junction Memristor
Tin and Oxygen-Vacancy Co-doping into Hematite Photoanode for Improved Photoelectrochemical Performances
Correction to: Tin and Oxygen-Vacancy Co-doping into Hematite Photoanode for Improved Photoelectrochemical Performances
Overview of emerging memristor families from resistive memristor to spintronic memristor
Guided anisotropic oxygen transport in vacancy ordered oxides
High oxygen-vacancy diffusivity predicted for perovskite oxide Ca0.5Sr0.5Co0.8Fe0.2O2.5
Ferroelectrics with a controlled oxygen-vacancy distribution by design
Critical ionic transport across an oxygen-vacancy ordering transition
A Novel Hybrid Point Defect of Oxygen Vacancy and Phosphorus Doping in TiO2 Anode for High-Performance Sodium Ion Capacitor
Whisky‐Born Memristor