Effect of oxygen vacancy and Si doping on the electrical properties of Ta2O5 in memristor characteristics
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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1 Online-Ressource.
- Sprache
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Englisch
- Erschienen in
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Effect of oxygen vacancy and Si doping on the electrical properties of Ta2O5 in memristor characteristics ; volume:13 ; number:1 ; day:3 ; month:10 ; year:2023 ; pages:1-12 ; date:12.2023
Scientific reports ; 13, Heft 1 (3.10.2023), 1-12, 12.2023
- Urheber
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Islam, Md. Sherajul
Lee, Jonghoon
Ganguli, Sabyasachi
Roy, Ajit K.
- Beteiligte Personen und Organisationen
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SpringerLink (Online service)
- DOI
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10.1038/s41598-023-43888-z
- URN
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urn:nbn:de:101:1-2024013114420011911866
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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15.08.2025, 07:27 MESZ
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Beteiligte
- Islam, Md. Sherajul
- Lee, Jonghoon
- Ganguli, Sabyasachi
- Roy, Ajit K.
- SpringerLink (Online service)
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